Inventor
HSU HENG-MING
US12 patents
⚠️ This page may combine multiple inventors who share the name “HSU HENG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
7 patentsUS6329234B1Dec 11, 2001
Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
TAIWAN SEMICONDUCTOR MFG212 citations98
US6472721B2Oct 29, 2002
Dual damascene interconnect structures that include radio frequency capacitors and inductors
TAIWAN SEMICONDUCTOR MFG60 citations95
US6903644B2Jun 7, 2005
Inductor device having improved quality factor
TAIWAN SEMICONDUCTOR MFG28 citations92
US6444517B1Sep 3, 2002
High Q inductor with Cu damascene via/trench etching simultaneous module
TAIWAN SEMICONDUCTOR MFG58 citations92
US6881996B2Apr 19, 2005
Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
TAIWAN SEMICONDUCTOR MFG15 citations83
US6812088B1Nov 2, 2004
Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
TAIWAN SEMICONDUCTOR MFG11 citations73
US6667217B1Dec 23, 2003
Method of fabricating a damascene copper inductor structure using a sub-0.18 um CMOS process
TAIWAN SEMICONDUCTOR MFG12 citations73