Inventor

TAKEWAKI TOSHIYUKI

JP52 patents

⚠️ This page may combine multiple inventors who share the name “TAKEWAKI TOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAKEWAKI TOSHIYUKI

NEC ELECTRONICS CORP

Semiconductor device having an anti-oxidizing layer that inhibits corrosion of an interconnect layer

Semiconductor device and manufacturing method for the same

Semiconductor device including dissimilar element-diffused metal layer and manufacturing method thereof

Narrow and wide copper interconnections composed of (111), (200) and (511) surfaces

Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing same

Semiconductor device fabricating method and treating liquid

Fuse and seal ring

Semiconductor method having silicon-diffused metal wiring layer

Single damascene structure semiconductor device having silicon-diffused metal wiring layer

Semiconductor device and method of manufacturing the same

Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having an interconnect that increases in impurity concentration as width increases

Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratios

Semiconductor device

Semiconductor device including capacitor including upper electrode covered with high density insulation film and production method thereof

Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increases

Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increases

Method of manfacturing semiconductor device

Semiconductor device having a refractory metal containing film and method for manufacturing the same

RENESAS ELECTRONICS CORP

Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device

Semiconductor device and a method for manufacturing a semiconductor device

Electrical fuse and semiconductor device

Method of manufacturing semiconductor device with a multi-layered gate dielectric

Semiconductor device including a strain relaxation film

Semiconductor device and method of manufacturing the same

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

Semiconductor device having a refractory metal containing film and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and a method for manufacturing a semiconductor device

Semiconductor device

Semiconductor device having dual damascene structure

Semiconductor device having projection on lower electrode and method for forming the same

Method of manufacturing semiconductor device

NEC CORP

Fabrication process of semiconductor device

Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

Method for manufacturing a multilayer interconnection structure

OSHIDA DAISUKE

Semiconductor device with high reliability and manufacturing method thereof

Semiconductor device and method of manufacturing the same

OHTO KOICHI

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

TAKEWAKI TOSHIYUKI

Semiconductor device having dual damascene structure

Method of manufacturing semiconductor device

OHMI TADAHIRO

Semiconductor device with enhanced thermal conductivity

TOSHIBA KK

Semiconductor memory device and method of manufacturing the same

TOSHIBA MEMORY CORP

Semiconductor memory device having memory cells provided in a height direction