Inventor
NGUYEN DZUNG H
US28 patents
⚠️ This page may combine multiple inventors who share the name “NGUYEN DZUNG H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
16 patentsUS7345924B2Mar 18, 2008
Programming memory devices
MICRON TECHNOLOGY INC59 citations98
US7269066B2Sep 11, 2007
Programming memory devices
MICRON TECHNOLOGY INC59 citations98
US6982905B2Jan 3, 2006
Method and apparatus for reading NAND flash memory array
MICRON TECHNOLOGY INC84 citations98
US7505323B2Mar 17, 2009
Programming memory devices
MICRON TECHNOLOGY INC12 citations93
US7525842B2Apr 28, 2009
Increased NAND flash memory read throughput
MICRON TECHNOLOGY INC17 citations92
US7061306B2Jun 13, 2006
Voltage booster
MICRON TECHNOLOGY INC22 citations92
US6930536B2Aug 16, 2005
Voltage booster
MICRON TECHNOLOGY INC31 citations92
US8730734B2May 20, 2014
Access line dependent biasing schemes
MICRON TECHNOLOGY INC5 citations84
US8358540B2Jan 22, 2013
Access line dependent biasing schemes
MICRON TECHNOLOGY INC12 citations84
US7903463B2Mar 8, 2011
Increased NAND flash memory read throughput
MICRON TECHNOLOGY INC5 citations74
US7688630B2Mar 30, 2010
Programming memory devices
MICRON TECHNOLOGY INC3 citations74
US7203093B2Apr 10, 2007
Method and apparatus for reading NAND flash memory array
MICRON TECHNOLOGY INC7 citations74
US9423969B2Aug 23, 2016
Sensing operations in a memory device
MICRON TECHNOLOGY INC1 citations63
US8705299B2Apr 22, 2014
Replacing defective memory blocks in response to external addresses
MICRON TECHNOLOGY INC3 citations63
US7881134B2Feb 1, 2011
Replacing defective columns of memory cells in response to external addresses
MICRON TECHNOLOGY INC4 citations63
US9165681B2Oct 20, 2015
Applying a voltage-delay correction to a non-defective memory block that replaces a defective memory block based on the actual location of the non-defective memory block
MICRON TECHNOLOGY INC0 citations52
SARIN VISHAL
4 patentsUS8446787B2May 21, 2013
Replacing defective memory blocks in response to external addresses
SARIN VISHAL9 citations84
US8064267B2Nov 22, 2011
Erase voltage reduction in a non-volatile memory device
SARIN VISHAL8 citations84
US8391080B2Mar 5, 2013
Erase voltage reduction in a non-volatile memory device
SARIN VISHAL4 citations63
US8295109B2Oct 23, 2012
Replacing defective columns of memory cells in response to external addresses
SARIN VISHAL3 citations63
NGUYEN DZUNG H
4 patentsUS8174892B2May 8, 2012
Increased NAND flash memory read throughput
NGUYEN DZUNG H2 citations61
US8593870B2Nov 26, 2013
Increased NAND flash memory read throughput
NGUYEN DZUNG H0 citations51
US8520436B2Aug 27, 2013
Programming memory devices
NGUYEN DZUNG H0 citations51
US8174889B2May 8, 2012
Programming memory devices
NGUYEN DZUNG H0 citations51