Inventor

JEONG WON-CHEOL

KR38 patents

⚠️ This page may combine multiple inventors who share the name “JEONG WON-CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JEONG WON-CHEOL

SAMSUNG ELECTRONICS CO LTD

Methods of operating magnetic random access memory devices including heat-generating structures

Phase-change random access memory device and method of operating the same

Integrated circuit devices having a stress buffer spacer and methods of fabricating the same

Phase change memory devices and their methods of fabrication

Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same

Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

Magnetic random access memory devices including heat generating layers and related methods

Semiconductor devices having a convex active region and methods of forming the same

Methods of operating a magnetic random access memory device and related devices and structures

Methods of operating magnetic random access memory device using spin injection and related devices

Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

Methods of forming fine patterns, and methods of forming trench isolation layers using the same

Magnetic memory device and method

Methods of operating magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures

Magnetic random access memory (MRAM) devices having nonparallel main and reference magnetic resistors

Magnetic memory device having flux focusing layer therein

Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereof

Integrated circuit device including field isolation layer and method of manufacturing the same

Phase change memory device and method of forming the same

Semiconductor devices having a planarized insulating layer and methods of forming the same

Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers

Twin-cell semiconductor memory devices

Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same

Magnetic memory devices and methods of forming the same

Memory devices having sharp-tipped phase change layer patterns

Non-volatile memory devices having improved operational characteristics

Non-volatile memory devices

Semiconductor devices having a planarized insulating layer

Magnetic memory device and method

Memory device with external magnetic field generator and method of operating and manufacturing the same

Magnetic memory devices having rotationally offset magnetic storage elements therein

Semiconductor device

JEONG WON-CHEOL

Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same

Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions

HWANG IN-JUN

Magnetic memory device and method

PARK JAE-HYUN

Phase change memory devices and their methods of fabrication

KIM HYUN-SUK

Non-volatile memory devices