P

Inventor

PARK YOON-MOON

KR12 patents
⚠️ This page may combine multiple inventors who share the name “PARK YOON-MOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents
US9735157B1Aug 15, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations82
US9318478B1Apr 19, 2016

Semiconductor device and fabricating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US7989869B2Aug 2, 2011

Non-volatile memory devices having improved operational characteristics

SAMSUNG ELECTRONICS CO LTD2 citations62
US11063065B2Jul 13, 2021

Semiconductor device having a negative capacitance using ferroelectrical material

SAMSUNG ELECTRONICS CO LTD0 citations61
US7419909B2Sep 2, 2008

Methods of forming a semiconductor device that allow patterns in different regions that have different pitches to be connected

SAMSUNG ELECTRONICS CO LTD5 citations60
US10916545B2Feb 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9087711B2Jul 21, 2015

Pattern structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations51

PARK YOON-MOON

1 patent
US8487383B2Jul 16, 2013

Flash memory device having triple well structure

PARK YOON-MOON6 citations69

SIM JAE-HWANG

1 patent
US8183152B2May 22, 2012

Method of fabricating semiconductor device

SIM JAE-HWANG5 citations62

KANG HEE-SOO

1 patent
US8208301B2Jun 26, 2012

Nonvolatile memory devices having common bit line structure

KANG HEE-SOO4 citations60

JEONG WON-CHEOL

1 patent
US8610192B2Dec 17, 2013

Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions

JEONG WON-CHEOL0 citations48

PARK YOON MOON

1 patent
US8436412B2May 7, 2013

Pattern structure and method of forming the same

PARK YOON MOON0 citations48