P

Inventor

HO HSIN-YI

TW45 patents
⚠️ This page may combine multiple inventors who share the name “HO HSIN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

34 patents
US6845052B1Jan 18, 2005

Dual reference cell sensing scheme for non-volatile memory

MACRONIX INT CO LTD124 citations96
US9646692B1May 9, 2017

Programming verify for nonvolatile memory

MACRONIX INT CO LTD24 citations94
US6421267B1Jul 16, 2002

Memory array architecture

MACRONIX INT CO LTD23 citations92
US7474565B2Jan 6, 2009

Programming scheme for non-volatile flash memory

MACRONIX INT CO LTD10 citations84
US7397705B1Jul 8, 2008

Method for programming multi-level cell memory array

MACRONIX INT CO LTD16 citations84
US6545911B2Apr 8, 2003

Flash memory erase method

MACRONIX INT CO LTD13 citations83
US9146569B2Sep 29, 2015

Low drop out regulator and current trimming device

MACRONIX INT CO LTD8 citations82
US6665216B1Dec 16, 2003

Apparatus and system for reading non-volatile memory with dual reference cells

MACRONIX INT CO LTD15 citations82
US10497437B1Dec 3, 2019

Decoding scheme for 3D cross-point memory array

MACRONIX INT CO LTD3 citations73
US9779813B2Oct 3, 2017

Phase change memory array architecture achieving high write/read speed

MACRONIX INT CO LTD4 citations72
US12494264B2Dec 9, 2025

Memory device and error correction method thereof

MACRONIX INT CO LTD0 citations63
US11495639B1Nov 8, 2022

Memory unit, array and operation method thereof

MACRONIX INT CO LTD0 citations63
US10915248B1Feb 9, 2021

Memory device

MACRONIX INT CO LTD1 citations63
US7835203B2Nov 16, 2010

Programming method and memory device using the same

MACRONIX INT CO LTD2 citations63
US11996148B2May 28, 2024

Switch circuit and memory array having the same

MACRONIX INT CO LTD0 citations62
US7961513B2Jun 14, 2011

Method for programming a multilevel memory

MACRONIX INT CO LTD4 citations62
US7796436B2Sep 14, 2010

Reading method for MLC memory and reading circuit using the same

MACRONIX INT CO LTD3 citations62
US7580292B2Aug 25, 2009

Method for programming a multilevel memory

MACRONIX INT CO LTD4 citations62
US7812754B2Oct 12, 2010

Digital to analog converter and method thereof

MACRONIX INT CO LTD2 citations61
US11049557B2Jun 29, 2021

Leakage current compensation in crossbar array

MACRONIX INT CO LTD1 citations60
US6563735B1May 13, 2003

NOR-structured semiconductor memory device

MACRONIX INT CO LTD3 citations60
US11711926B2Jul 25, 2023

Memory array and memory structure

MACRONIX INT CO LTD0 citations52
US9558818B2Jan 31, 2017

Memory and memory managing method

MACRONIX INT CO LTD0 citations52
US8045403B2Oct 25, 2011

Programming method and memory device using the same

MACRONIX INT CO LTD0 citations52
US8031523B2Oct 4, 2011

Memory and reading method thereof

MACRONIX INT CO LTD0 citations52
US7649772B2Jan 19, 2010

Memory and method for programming in multiple storage region multi-level cells

MACRONIX INT CO LTD1 citations52
US7539058B2May 26, 2009

Non-volatile memory and operating method thereof

MACRONIX INT CO LTD0 citations52
US7251166B2Jul 31, 2007

Method for verifying a programmed flash memory

MACRONIX INT CO LTD0 citations52
US9507663B1Nov 29, 2016

Memory device and operation method

MACRONIX INT CO LTD0 citations51
US9471485B2Oct 18, 2016

Difference L2P method

MACRONIX INT CO LTD1 citations51
US9152557B2Oct 6, 2015

Program method, data recovery method, and flash memory using the same

MACRONIX INT CO LTD0 citations51
US8947961B2Feb 3, 2015

Management of non-volatile memory

MACRONIX INT CO LTD1 citations51
US8023333B2Sep 20, 2011

Reading method for MLC memory and reading circuit using the same

MACRONIX INT CO LTD0 citations51
US10297316B2May 21, 2019

Phase change memory apparatus and read control method to reduce read disturb and sneak current phenomena

MACRONIX INT CO LTD0 citations39

HO HSIN-YI

5 patents

HUNG CHUN-HSIUNG

3 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

KUO LUNG-YI

1 patent

LI CHIA CHING

1 patent