Inventor
HO HSIN-YI
TW45 patents
⚠️ This page may combine multiple inventors who share the name “HO HSIN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
34 patentsUS6845052B1Jan 18, 2005
Dual reference cell sensing scheme for non-volatile memory
MACRONIX INT CO LTD124 citations96
US9646692B1May 9, 2017
Programming verify for nonvolatile memory
MACRONIX INT CO LTD24 citations94
US6421267B1Jul 16, 2002
Memory array architecture
MACRONIX INT CO LTD23 citations92
US7474565B2Jan 6, 2009
Programming scheme for non-volatile flash memory
MACRONIX INT CO LTD10 citations84
US7397705B1Jul 8, 2008
Method for programming multi-level cell memory array
MACRONIX INT CO LTD16 citations84
US6545911B2Apr 8, 2003
Flash memory erase method
MACRONIX INT CO LTD13 citations83
US9146569B2Sep 29, 2015
Low drop out regulator and current trimming device
MACRONIX INT CO LTD8 citations82
US6665216B1Dec 16, 2003
Apparatus and system for reading non-volatile memory with dual reference cells
MACRONIX INT CO LTD15 citations82
US10497437B1Dec 3, 2019
Decoding scheme for 3D cross-point memory array
MACRONIX INT CO LTD3 citations73
US9779813B2Oct 3, 2017
Phase change memory array architecture achieving high write/read speed
MACRONIX INT CO LTD4 citations72
US12494264B2Dec 9, 2025
Memory device and error correction method thereof
MACRONIX INT CO LTD0 citations63
US11495639B1Nov 8, 2022
Memory unit, array and operation method thereof
MACRONIX INT CO LTD0 citations63
US10915248B1Feb 9, 2021
Memory device
MACRONIX INT CO LTD1 citations63
US7835203B2Nov 16, 2010
Programming method and memory device using the same
MACRONIX INT CO LTD2 citations63
US11996148B2May 28, 2024
Switch circuit and memory array having the same
MACRONIX INT CO LTD0 citations62
US7961513B2Jun 14, 2011
Method for programming a multilevel memory
MACRONIX INT CO LTD4 citations62
US7796436B2Sep 14, 2010
Reading method for MLC memory and reading circuit using the same
MACRONIX INT CO LTD3 citations62
US7580292B2Aug 25, 2009
Method for programming a multilevel memory
MACRONIX INT CO LTD4 citations62
US7812754B2Oct 12, 2010
Digital to analog converter and method thereof
MACRONIX INT CO LTD2 citations61
US11049557B2Jun 29, 2021
Leakage current compensation in crossbar array
MACRONIX INT CO LTD1 citations60
US6563735B1May 13, 2003
NOR-structured semiconductor memory device
MACRONIX INT CO LTD3 citations60
US11711926B2Jul 25, 2023
Memory array and memory structure
MACRONIX INT CO LTD0 citations52
US9558818B2Jan 31, 2017
Memory and memory managing method
MACRONIX INT CO LTD0 citations52
US8045403B2Oct 25, 2011
Programming method and memory device using the same
MACRONIX INT CO LTD0 citations52
US8031523B2Oct 4, 2011
Memory and reading method thereof
MACRONIX INT CO LTD0 citations52
US7649772B2Jan 19, 2010
Memory and method for programming in multiple storage region multi-level cells
MACRONIX INT CO LTD1 citations52
US7539058B2May 26, 2009
Non-volatile memory and operating method thereof
MACRONIX INT CO LTD0 citations52
US7251166B2Jul 31, 2007
Method for verifying a programmed flash memory
MACRONIX INT CO LTD0 citations52
US9507663B1Nov 29, 2016
Memory device and operation method
MACRONIX INT CO LTD0 citations51
US9471485B2Oct 18, 2016
Difference L2P method
MACRONIX INT CO LTD1 citations51
US9152557B2Oct 6, 2015
Program method, data recovery method, and flash memory using the same
MACRONIX INT CO LTD0 citations51
US8947961B2Feb 3, 2015
Management of non-volatile memory
MACRONIX INT CO LTD1 citations51
US8023333B2Sep 20, 2011
Reading method for MLC memory and reading circuit using the same
MACRONIX INT CO LTD0 citations51
US10297316B2May 21, 2019
Phase change memory apparatus and read control method to reduce read disturb and sneak current phenomena
MACRONIX INT CO LTD0 citations39
HO HSIN-YI
5 patentsUS8189357B2May 29, 2012
Memory with multiple reference cells
HO HSIN-YI3 citations60
US8077513B2Dec 13, 2011
Method and apparatus for programming a multi-level memory
HO HSIN-YI2 citations60
US8194462B2Jun 5, 2012
Integrated circuit of device for memory cell
HO HSIN-YI0 citations50
US8456906B2Jun 4, 2013
Memory and operation method therefor
HO HSIN-YI0 citations49
US8094494B2Jan 10, 2012
Memory and operation method therefor
HO HSIN-YI1 citations49
HUNG CHUN-HSIUNG
3 patentsUS9009566B2Apr 14, 2015
Outputting information of ECC corrected bits
HUNG CHUN-HSIUNG15 citations84
US8239619B2Aug 7, 2012
Method and apparatus for high-speed byte-access in block-based flash memory
HUNG CHUN-HSIUNG14 citations84
US8259484B2Sep 4, 2012
3D chip selection for shared input packages
HUNG CHUN-HSIUNG4 citations63