Inventor

HONG SUK KYOUNG

KR54 patents

⚠️ This page may combine multiple inventors who share the name “HONG SUK KYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONG SUK KYOUNG

HYNIX SEMICONDUCTOR INC

Method of manufacturing a phase change RAM device utilizing reduced phase change current

Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof

One-transistor type DRAM

Radio frequency identification tag capable of storing and restoring flag data

Method for efficiently driving a phase change memory device

Reduced current phase-change memory device

Phase change memory device

FeRAM (ferroelectric random access memory) and method for forming the same

One-transistor type dram

One-transistor type DRAM

Time efficient phase change memory data storage device

Method for driving multi-level data to a phase change memory device

Method for driving a phase change memory device using various write conditions

Phase change memory device with dummy cell array

Method for manufacturing ferroelectric random access memory capacitor

Method for driving phase change memory device

Method for efficiently driving a phase change memory device

Phase change memory device with bit line discharge path

Phase change memory device, manufacturing method thereof and operating method thereof

Phase change memory device

Phase change RAM device

Phase change memory device and method for manufacturing the same

Phase change memory device and operating method thereof

Phase change memory device having a plurality of reference currents and operating method thereof

One-transistor type DRAM

Semiconductor memory device

Non-volatile latch circuit for restoring data after power interruption

Semiconductor memory device with ferroelectric device

Semiconductor memory device with ferroelectric device

Phase change memory device

Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the same

One-transistor type DRAM

Method for manufacturing ferroelectric random access memory capacitor

Method for fabricating ferroelectric random access memory device with merged-top electrode-plateline capacitor

Phase change RAM device and method for fabricating the same

KANG HEE BOK

Dual antenna RFID tag

Phase change memory device having write driving control signal corresponding to set/reset write time

Semiconductor memory device with ferroelectric device and refresh method thereof

Phase change memory device with reference cell array

Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof

Phase change memory device with improved performance that minimizes cell degradation

Radio frequency identification device having nonvolatile ferroelectric memory

Radio frequency identification device

Phase change memory device using a multiple level write voltage

Radio frequency identification device having nonvolatile ferroelectric memory

Phase change memory device having multiple reset signals and operating method thereof

HYUNDAI ELECTRONICS IND

Semiconductor device with capacitor structure having hydrogen barrier layer and method for the manufacture thereof

Method for manufacturing semiconductor memory device incorporating therein copacitor

Stack capacitor having a diffusion barrier

Semiconductor device having a capacitor and method for the manufacture thereof