Inventor

JUNG CHANGHO

US63 patents

⚠️ This page may combine multiple inventors who share the name “JUNG CHANGHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUNG CHANGHO

QUALCOMM INC

Overlapping precharge and data write

Write driver for write assistance in memory device

Wide range multiport bitcell

Write word-line assist circuitry for a byte-writeable memory

Write driver and pre-charge circuitry for high performance pseudo-dual port (PDP) memories

Wide-range level-shifter

Hybrid ternary content addressable memory

CMOS level shifter circuit design

SRAM with burst mode address comparator

Timing circuit for memories

Memory cell with improved write margin

High-speed memory write driver circuit with voltage level shifting features

High-speed pseudo-dual-port memory with separate precharge controls

Self reset clock buffer in memory devices

Pseudo-dual-port SRAM with burst-mode address comparator

High-speed level shifter

Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths

Apparatus and method for writing data to memory array circuits

Determining a voltage and/or frequency for a performance mode

Global reset with replica for pulse latch pre-decoders

Pseudo dual port memory with dual latch flip-flop

Pseudo dual port memory

Method of pseudo-triple-port SRAM datapaths

SRAM with scan mode

Memory with single-ended sensing using reset-set latch

Pseudo-triple-port SRAM datapaths

SRAM with burst mode operation

Burst-mode memory with column multiplexer

Decoding for pseudo-triple-port SRAM

Techniques for reducing rock bottom leakage in memory

SRAM with burst mode operation

Pulse generation in dual supply systems

Static NAND cell for ternary content addressable memory (TCAM)

SRAM with advanced burst mode address comparator

Static NAND cell for ternary content addressable memory (TCAM)

System and method of performing power on reset for memory array circuits

Self reset clock buffer in memory devices

Pseudo-NOR cell for ternary content addressable memory

HYUNDAI MOTOR CO LTD

Co clean-up catalyst, after treatment system and after treatment method

Ammonia production catalyst and after treatment system

Apparatus for purifying exhaust gas

After treatment system and after treatment method for lean-burn engine

Co clean-up catalyst, after treatment system and after treatment method

CO clean-up catalyst, after treatment system and after treatment method

Cu/LTA catalyst and exhaust system, and manufacturing method of cu/LTA catalyst

After treatment system and after treatment method for lean-burn engine

Apparatus for purifying exhaust gas

Regeneration method for purifying exhaust gas

LG ELECTRONICS INC

Mobile terminal with voice recognition mode for multitasking and control method thereof

TERZIOGLU ESIN

Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods