Inventor

SHIH HUNG-LIN

TW26 patents

⚠️ This page may combine multiple inventors who share the name “SHIH HUNG-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIH HUNG-LIN

UNITED MICROELECTRONICS CORP

Complementary metal oxide semiconductor device and method of forming the same

Complementary metal-oxide-semiconductor device and fabricating method thereof

Illuminating efficiency-increasable and light-erasable embedded memory structure

Method for forming a FinFET structure

Metal oxide semiconductor transistor device

Spatial semiconductor structure

Method of forming a semiconductor device

Storage unit of single-conductor non-volatile memory cell and method of erasing the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Anti-fusse structure and method of fabricating the same

Pin photodiode structure

Method of manufacturing complementary metal oxide semiconductor transistor

SiGe MOSFET with an erosion preventing Six1Gey1 layer

Method of fabricating semiconductor device

Method for manufacturing passive components

Non-volatile memory cell

Complementary metal oxide semiconductor device and method of forming the same

Spatial semiconductor structure and method of fabricating the same

DRAM and flash structure and method of fabricating the same

Layout structure of non-volatile memory device

SHIH HUNG-LIN

Manufacturing method and structure of non-volatile memory

Illuminating efficiency-increasable and light-erasable memory

Metal oxide semiconductor transistor

Method of fabricating a charge trapping non-volatile memory cell

Docking station and computer system using the docking station