Inventor
WANG TSAN-CHUN
TW73 patents
⚠️ This page may combine multiple inventors who share the name “WANG TSAN-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
32 patentsUS9634141B1Apr 25, 2017
Interlayer dielectric film in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations93
US10249530B2Apr 2, 2019
Interlayer dielectric film in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10163657B1Dec 25, 2018
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9824937B1Nov 21, 2017
Flowable CVD quality control in STI loop
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations84
US9680014B2Jun 13, 2017
Semiconductor device including Fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11043580B2Jun 22, 2021
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10714598B2Jul 14, 2020
Method of manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11677012B2Jun 13, 2023
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11848361B2Dec 19, 2023
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11361977B2Jun 14, 2022
Gate structure of semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11257911B2Feb 22, 2022
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10854729B2Dec 1, 2020
Method to reduce etch variation using ion implantation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10002867B2Jun 19, 2018
Fin-type field effect transistor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9748363B2Aug 29, 2017
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9595522B2Mar 14, 2017
Semiconductor device with a dislocation structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9564530B2Feb 7, 2017
Integrated circuit structure and method with solid phase diffusion
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9558946B2Jan 31, 2017
FinFETs and methods of forming FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9537010B2Jan 3, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9536773B2Jan 3, 2017
Mechanism of forming a trench structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9496385B2Nov 15, 2016
Structure and method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11031293B2Jun 8, 2021
Method for fabricating a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11011428B2May 18, 2021
Method for fabricating a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10490452B2Nov 26, 2019
Method for fabricating a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations67
US12211701B2Jan 28, 2025
Gate structure of semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12211843B2Jan 28, 2025
Manufacturing method of fin-type field effect transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12205994B2Jan 21, 2025
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11289479B2Mar 29, 2022
Fin-type field effect transistor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9412838B2Aug 9, 2016
Ion implantation methods and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9401414B2Jul 26, 2016
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9281196B2Mar 8, 2016
Method to reduce etch variation using ion implantation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11728219B2Aug 15, 2023
Method for fabricating a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532485B2Dec 20, 2022
Process for making multi-gate transistors and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9029226B2May 12, 2015
Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices
TAIWAN SEMICONDUCTOR MFG25 citations93
US9245982B2Jan 26, 2016
Tilt implantation for forming FinFETs
TAIWAN SEMICONDUCTOR MFG5 citations84
US9184089B2Nov 10, 2015
Mechanism of forming a trench structure
TAIWAN SEMICONDUCTOR MFG7 citations84
US9142650B2Sep 22, 2015
Tilt implantation for forming FinFETs
TAIWAN SEMICONDUCTOR MFG3 citations63
US9117745B2Aug 25, 2015
Mechanisms for forming stressor regions in a semiconductor device
TAIWAN SEMICONDUCTOR MFG2 citations63
US8890258B2Nov 18, 2014
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG3 citations63
TSAI CHUN HSIUNG
3 patentsUS8723266B2May 13, 2014
Pinch-off control of gate edge dislocation
TSAI CHUN HSIUNG13 citations84
US8629046B2Jan 14, 2014
Semiconductor device with a dislocation structure and method of forming the same
TSAI CHUN HSIUNG7 citations84
US8674453B2Mar 18, 2014
Mechanisms for forming stressor regions in a semiconductor device
TSAI CHUN HSIUNG12 citations81
CHEN YU-CHENG
2 patentsFANG ZIWEI
1 patentLIN HSIANG-LIN
1 patentWANG TSAN-CHUN
1 patentLAI CHUN-CHI
1 patentCHANG KE-CHIH
1 patentLO WAN-YU
1 patentLI YI-HUI
1 patentShowing the top 50 of 73 patents by PatentIndex Score.