Inventor
BHUWALKA KRISHNA KUMAR
IN33 patents
⚠️ This page may combine multiple inventors who share the name “BHUWALKA KRISHNA KUMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS7834345B2Nov 16, 2010
Tunnel field-effect transistors with superlattice channels
TAIWAN SEMICONDUCTOR MFG57 citations98
US7812370B2Oct 12, 2010
Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
TAIWAN SEMICONDUCTOR MFG49 citations98
US9337109B2May 10, 2016
Multi-threshold voltage FETs
TAIWAN SEMICONDUCTOR MFG14 citations84
US8697510B2Apr 15, 2014
Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
TAIWAN SEMICONDUCTOR MFG5 citations84
US8354695B2Jan 15, 2013
Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
TAIWAN SEMICONDUCTOR MFG8 citations84
US9385198B2Jul 5, 2016
Heterostructures for semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US9368353B2Jun 14, 2016
Multiple-threshold voltage devices and method of forming same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9231102B2Jan 5, 2016
Asymmetric semiconductor device
TAIWAN SEMICONDUCTOR MFG0 citations52
US9093273B2Jul 28, 2015
Multiple-threshold voltage devices and method of forming same
TAIWAN SEMICONDUCTOR MFG0 citations52
US8802531B2Aug 12, 2014
Split-channel transistor and methods for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9412871B2Aug 9, 2016
FinFET with channel backside passivation layer device and method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9647097B2May 9, 2017
Vertical tunnel field effect transistor (FET)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10872972B2Dec 22, 2020
Vertical tunnel field effect transistor (FET)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10475907B2Nov 12, 2019
Vertical tunnel field effect transistor (FET)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164024B2Dec 25, 2018
Heterostructures for semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10050111B2Aug 14, 2018
Semiconductor device channel system and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9887272B2Feb 6, 2018
Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711632B2Jul 18, 2017
Intra-band tunnel FET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
SAMSUNG ELECTRONICS CO LTD
7 patentsUS10217816B2Feb 26, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations93
US9634092B2Apr 25, 2017
Semiconductor devices having tapered active regions
SAMSUNG ELECTRONICS CO LTD12 citations82
US11515391B2Nov 29, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11133311B2Sep 28, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US12471366B2Nov 11, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11876097B2Jan 16, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US10840332B2Nov 17, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
BHUWALKA KRISHNA KUMAR
5 patentsUS8604518B2Dec 10, 2013
Split-channel transistor and methods for forming the same
BHUWALKA KRISHNA KUMAR18 citations92
US8471329B2Jun 25, 2013
Tunnel FET and methods for forming the same
BHUWALKA KRISHNA KUMAR25 citations92
US8587075B2Nov 19, 2013
Tunnel field-effect transistor with metal source
BHUWALKA KRISHNA KUMAR18 citations83
US8669163B2Mar 11, 2014
Tunnel field-effect transistors with superlattice channels
BHUWALKA KRISHNA KUMAR5 citations72
US8723223B2May 13, 2014
Hybrid Fin field-effect transistors
BHUWALKA KRISHNA KUMAR2 citations62