Inventor
MARTIN PATRICK M
US21 patents
⚠️ This page may combine multiple inventors who share the name “MARTIN PATRICK M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GODET LUDOVIC
5 patentsUS8133804B1Mar 13, 2012
Method and system for modifying patterned photoresist using multi-step ion implantation
GODET LUDOVIC35 citations92
US8460569B2Jun 11, 2013
Method and system for post-etch treatment of patterned substrate features
GODET LUDOVIC18 citations84
US8435727B2May 7, 2013
Method and system for modifying photoresist using electromagnetic radiation and ion implantation
GODET LUDOVIC5 citations84
US8778603B2Jul 15, 2014
Method and system for modifying substrate relief features using ion implantation
GODET LUDOVIC2 citations63
US8974683B2Mar 10, 2015
Method and system for modifying resist openings using multiple angled ions
GODET LUDOVIC2 citations60
VARIAN SEMICONDUCTOR EQUIPMENT
5 patentsUS8354655B2Jan 15, 2013
Method and system for controlling critical dimension and roughness in resist features
VARIAN SEMICONDUCTOR EQUIPMENT7 citations84
US9340877B2May 17, 2016
Method and system for modifying photoresist using electromagnetic radiation and ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT4 citations73
US8698109B2Apr 15, 2014
Method and system for controlling critical dimension and roughness in resist features
VARIAN SEMICONDUCTOR EQUIPMENT0 citations52
US8937019B2Jan 20, 2015
Techniques for generating three dimensional structures
VARIAN SEMICONDUCTOR EQUIPMENT1 citations49
US8952344B2Feb 10, 2015
Techniques for processing photoresist features using ions
VARIAN SEMICONDUCTOR EQUIPMENT0 citations47
APPLIED MATERIALS INC
4 patentsUS9716012B2Jul 25, 2017
Methods of selective layer deposition
APPLIED MATERIALS INC15 citations84
US10026613B2Jul 17, 2018
Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films
APPLIED MATERIALS INC2 citations72
US9406507B2Aug 2, 2016
Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films
APPLIED MATERIALS INC2 citations62
US9799531B2Oct 24, 2017
Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films
APPLIED MATERIALS INC0 citations51