Inventor

LEVY MARK D

US39 patents

⚠️ This page may combine multiple inventors who share the name “LEVY MARK D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEVY MARK D

GLOBALFOUNDRIES US INC

Unlanded thermal dissipation pillar adjacent active contact

Photodetector array with diffraction gratings having different pitches

Waveguide with attenuator

Photodetector with reflector with air gap adjacent photodetecting region

Photodiode and/or PIN diode structures

High-electron-mobility transistor with field plate and sidewall spacers

Switches in bulk substrate

Field effect transistor

Airgap structures in auto-doped region under one or more transistors

Gate structures with air gap isolation features

Photodiode and/or pin diode structures

Switches in bulk substrate

Structure with polycrystalline active region fill shape(s), and related method

Photodiode and/or pin diode structures with one or more vertical surfaces

Photodetectors used with broadband signal

Avalanche photodiode

Bulk semiconductor structure with a multi-level polycrystalline semiconductor region and method

Structure with polycrystalline isolation region below polycrystalline fill shape(s) and selective active device(s), and related method

Field effect transistor with buried fluid-based gate and method

Multi-channel transistor

Transistor with multi-level self-aligned gate and source/drain terminals and methods

Transistor with multi-level self-aligned gate and source/drain terminals and methods

Microfluidic channel structure and method

Semiconductor structure with frontside port and cavity features for conveying sample to sensing element

Structure including multi-level field plate and method of forming the structure

Ultralow-K dielectric-gap wrapped contacts and method

Device with dual isolation structure

Enhancement mode transistor with a robust gate and method

Integrated circuit structure with through-metal through-substrate interconnect and method

Semiconductor structure including photodiode-based fluid sensor and methods

IBM

Variable performance ranking and modification in design for manufacturability of circuits

Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region

Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region

Copper to aluminum interlayer interconnect using stud and via liner

Copper to aluminum interlayer interconnect using stud and via liner

Multi-run selective pattern and etch wafer process

GAMBINO JEFFREY P

Discontinuous guard ring

Pixel sensor cells and methods of manufacturing

GLOBALFOUNDRIES INC

Silicon waveguide structure with arbitrary geometry on bulk silicon substrate, related systems and program products