P

Inventor

KIM JIN-BUM

KR73 patents
⚠️ This page may combine multiple inventors who share the name “KIM JIN-BUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US10297601B2May 21, 2019

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD19 citations94
US9054189B1Jun 9, 2015

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD28 citations93
US8921940B2Dec 30, 2014

Semiconductor device and a method for fabricating the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US8039902B2Oct 18, 2011

Semiconductor devices having Si and SiGe epitaxial layers

SAMSUNG ELECTRONICS CO LTD39 citations92
US9324623B1Apr 26, 2016

Method of manufacturing semiconductor device having active fins

SAMSUNG ELECTRONICS CO LTD21 citations90
US9859387B2Jan 2, 2018

Semiconductor device having contact plugs

SAMSUNG ELECTRONICS CO LTD9 citations84
US10672764B2Jun 2, 2020

Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor

SAMSUNG ELECTRONICS CO LTD8 citations83
US10211322B1Feb 19, 2019

Semiconductor device including channel pattern and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD12 citations83
US8912063B2Dec 16, 2014

Semiconductor device having blocking pattern and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations82
US11251307B2Feb 15, 2022

Device comprising 2D material

SAMSUNG ELECTRONICS CO LTD2 citations73
US10515798B2Dec 24, 2019

Method of fabricating device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD4 citations73
US10084049B2Sep 25, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9735158B2Aug 15, 2017

Semiconductor devices having bridge layer and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9275995B2Mar 1, 2016

Semiconductor devices having composite spacers containing different dielectric materials

SAMSUNG ELECTRONICS CO LTD6 citations73
US9087900B1Jul 21, 2015

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US9608117B2Mar 28, 2017

Semiconductor devices including a finFET

SAMSUNG ELECTRONICS CO LTD4 citations72
US11705503B2Jul 18, 2023

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US12464779B2Nov 4, 2025

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US10600646B2Mar 24, 2020

Method of fabricating device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD1 citations63
US9054217B2Jun 9, 2015

Method for fabricating semiconductor device having an embedded source/drain

SAMSUNG ELECTRONICS CO LTD2 citations63
US7595246B2Sep 29, 2009

Methods of manufacturing field effect transistors having elevated source/drain regions

SAMSUNG ELECTRONICS CO LTD4 citations63
US12581634B2Mar 17, 2026

Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11469237B2Oct 11, 2022

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11735663B2Aug 22, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11233150B2Jan 25, 2022

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US10164030B2Dec 25, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10147723B2Dec 4, 2018

Semiconductor devices having bridge layer and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9755076B2Sep 5, 2017

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US9553192B2Jan 24, 2017

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US9040394B2May 26, 2015

Method for fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US8361860B2Jan 29, 2013

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations52

KIM JIN-BUM

5 patents

DOOSAN HEAVY IND & CONSTRUCTION CO LTD

4 patents

KIM SEOK-HOON

2 patents

NEUBILITY

2 patents

KIM JIN BUM

2 patents

TAK YONG SUK

1 patent

KIM YONG-SHIK

1 patent

BAK HYO-RIM

1 patent

LEE BYUNG-HAK

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.