Inventor
XIE XINYUN
CN14 patents
⚠️ This page may combine multiple inventors who share the name “XIE XINYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR MFG INT SHANGHAI CORP
11 patentsUS9799676B2Oct 24, 2017
Semiconductor device, FinFET transistor and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP8 citations83
US9634087B1Apr 25, 2017
FinFET and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP10 citations82
US9502403B2Nov 22, 2016
Method for core and in/out-put device reliability improve at high-K last process
SEMICONDUCTOR MFG INT SHANGHAI CORP4 citations71
US10957785B2Mar 23, 2021
Method for manufacturing semiconductor device
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations61
US10381464B2Aug 13, 2019
Method for manufacturing semiconductor device
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations61
US10134761B2Nov 20, 2018
Semiconductor device and FinFET transistor
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US10290724B2May 14, 2019
FinFET devices having a material formed on reduced source/drain region
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations50
US9985015B2May 29, 2018
Semiconductor device having improved core and input/output device reliability
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations50
US9673325B2Jun 6, 2017
FinFET device having a material formed on reduced source/drain region and method of forming the same
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations50
US9899380B2Feb 20, 2018
FINFET structure and method of forming same
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations41
US9472668B2Oct 18, 2016
Semiconductor device and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations40