Inventor

IWASAKI TOMIO

JP76 patents

⚠️ This page may combine multiple inventors who share the name “IWASAKI TOMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IWASAKI TOMIO

HITACHI LTD

Method for producing semiconductor devices that includes forming a copper film in contact with a ruthenium film

Semiconductor device with multilayer conductive structure formed on a semiconductor substrate

Semiconductor device

Phase change memory featuring ferromagnetic layers in contact with phase change layer

Semiconductor device

Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain state

Semiconductor device having aluminum conductors

Semiconductor device having layered interconnect structure with a copper or platinum conducting film and a neighboring film

Semiconductor device with layered interconnect structure

Semiconductor device including storage capacitor

Semiconductor device and method of manufacturing the same

Semiconductor device with adhesion-improvement capacitor and process for producing the device

Semiconductor device with copper wiring connected to storage capacitor

Semiconductor device with copper wiring connected to storage capacitor

Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten

Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector

Semiconductor memory with information storage capacitance including an electrode containing precious metal and an added element

Semiconductor device with multilayer conductive structure formed on a semiconductor substrate

Semiconductor device

Semiconductor device

Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum

Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film

Alloy and lithium ion battery

RENESAS TECH CORP

Phase change memory and phase change recording medium

Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process

Semiconductor device and its production process

Semiconductor device

Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring

Semiconductor device

Semiconductor device and its production process

Semiconductor device having aluminum alloy conductors

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device

Phase change memory and phase change recording medium

Semiconductor device and manufacturing method thereof

Miniaturized semiconductor device with improved dielectric properties

Semiconductor device and production method therefor

RENESAS ELECTRONICS CORP

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

MATSUI YUICHI

Semiconductor memory

Semiconductor memory

Semiconductor memory

TRECENTI TECHNOLOGIES INC

Semiconductor device and manufacturing method of the same

Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof

NOGUCHI JUNJI

Semiconductor device and manufacturing method thereof

HITACHI MEDIA ELECTRON KK

Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator

HITACHI GLOBAL STORAGE TECH

Perpendicular magnetic recording medium for high density recording and manufacturing of the same