Inventor
HILLE FRANK
DE32 patents
⚠️ This page may combine multiple inventors who share the name “HILLE FRANK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS8008712B2Aug 30, 2011
Metallization and its use in, in particular, an IGBT or a diode
INFINEON TECHNOLOGIES AG14 citations92
US7514750B2Apr 7, 2009
Semiconductor device and fabrication method suitable therefor
INFINEON TECHNOLOGIES AG22 citations92
US8367532B2Feb 5, 2013
Semiconductor device and fabrication method
INFINEON TECHNOLOGIES AG5 citations84
US9685504B2Jun 20, 2017
Semiconductor to metal transition for semiconductor devices
INFINEON TECHNOLOGIES AG6 citations82
US10276656B2Apr 30, 2019
Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure
INFINEON TECHNOLOGIES AG2 citations73
US10978418B2Apr 13, 2021
Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer
INFINEON TECHNOLOGIES AG2 citations71
US10461056B2Oct 29, 2019
Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact
INFINEON TECHNOLOGIES AG2 citations71
US9443971B2Sep 13, 2016
Semiconductor to metal transition
INFINEON TECHNOLOGIES AG5 citations71
US11315892B2Apr 26, 2022
Power semiconductor device load terminal
INFINEON TECHNOLOGIES AG0 citations62
US12033972B2Jul 9, 2024
Chip package, method of forming a chip package and method of forming an electrical contact
INFINEON TECHNOLOGIES AG0 citations61
US10535743B2Jan 14, 2020
Metallization and its use in, in particular, an IGBT or a diode
INFINEON TECHNOLOGIES AG0 citations52
US10777506B2Sep 15, 2020
Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10475743B2Nov 12, 2019
Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10079217B2Sep 18, 2018
Power semiconductor device load terminal
INFINEON TECHNOLOGIES AG0 citations51
US9385181B2Jul 5, 2016
Semiconductor diode and method of manufacturing a semiconductor diode
INFINEON TECHNOLOGIES AG0 citations51
US7511353B2Mar 31, 2009
Semiconductor diode and production method suitable therefor
INFINEON TECHNOLOGIES AG1 citations49
US9543405B2Jan 10, 2017
Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure
INFINEON TECHNOLOGIES AG0 citations41
INFINEON TECHNOLOGIES AUSTRIA
11 patentsUS8344415B2Jan 1, 2013
Semiconductor component
INFINEON TECHNOLOGIES AUSTRIA12 citations84
US7880200B2Feb 1, 2011
Semiconductor device including a free wheeling diode
INFINEON TECHNOLOGIES AUSTRIA10 citations84
US8003502B2Aug 23, 2011
Semiconductor device and fabrication method
INFINEON TECHNOLOGIES AUSTRIA4 citations74
US7709887B2May 4, 2010
Semiconductor component and method
INFINEON TECHNOLOGIES AUSTRIA7 citations73
US7932583B2Apr 26, 2011
Reduced free-charge carrier lifetime device
INFINEON TECHNOLOGIES AUSTRIA6 citations62
US7768093B2Aug 3, 2010
Power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations62
US7557386B2Jul 7, 2009
Reverse conducting IGBT with vertical carrier lifetime adjustment
INFINEON TECHNOLOGIES AUSTRIA6 citations62
US7541660B2Jun 2, 2009
Power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations62
US9312334B2Apr 12, 2016
Semiconductor component
INFINEON TECHNOLOGIES AUSTRIA0 citations52
US8860133B2Oct 14, 2014
Semiconductor component
INFINEON TECHNOLOGIES AUSTRIA0 citations52
US7645690B2Jan 12, 2010
Method for producing an integrated circuit having semiconductor zones with a steep doping profile
INFINEON TECHNOLOGIES AUSTRIA0 citations52