Inventor

VELLEI ANTONIO

AT23 patents

⚠️ This page may combine multiple inventors who share the name “VELLEI ANTONIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VELLEI ANTONIO

INFINEON TECHNOLOGIES AG

Method for producing IGBT with dV/dt controllability

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Method for producing IGBT with dV/dt controllability

Bipolar transistor device with an emitter having two types of emitter regions

Semiconductor device and insulated gate bipolar transistor with barrier structure

Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer

Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact

Power semiconductor device having a barrier region

IGBT with dV/dt controllability

IGBT having a barrier region

IGBT with dV/dt controllability

MOS-transistor with separated electrodes arranged in a trench

Chip package, method of forming a chip package and method of forming an electrical contact

Method of processing a power semiconductor device

Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same

IGBT with dV/dt controllability

Bipolar transistor device with an emitter having two types of emitter regions

Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures

Semiconductor device with auxiliary structure including deep level dopants

Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same

Power semiconductor transistor having increased bipolar amplification

Trench transistor device

INFINEON TECHNOLOGIES AUSTRIA AG

Rc igbt