Inventor
LU YEN-TIEN
US11 patents
Patents
11 patentsUS11515203B2Nov 29, 2022
Selective deposition of conductive cap for fully-aligned-via (FAV)
TOKYO ELECTRON LTD2 citations72
US11164781B2Nov 2, 2021
ALD (atomic layer deposition) liner for via profile control and related applications
TOKYO ELECTRON LTD2 citations72
US11121027B2Sep 14, 2021
High aspect ratio via etch using atomic layer deposition protection layer
TOKYO ELECTRON LTD4 citations71
US11742241B2Aug 29, 2023
ALD (atomic layer deposition) liner for via profile control and related applications
TOKYO ELECTRON LTD0 citations61
US10950444B2Mar 16, 2021
Metal hard mask layers for processing of microelectronic workpieces
TOKYO ELECTRON LTD1 citations61
US11289325B2Mar 29, 2022
Radiation of substrates during processing and systems thereof
TOKYO ELECTRON LTD0 citations59
US11721578B2Aug 8, 2023
Split ash processes for via formation to suppress damage to low-K layers
TOKYO ELECTRON LTD0 citations51
US11688604B2Jun 27, 2023
Method for using ultra thin ruthenium metal hard mask for etching profile control
TOKYO ELECTRON LTD0 citations51
US12598932B2Apr 7, 2026
Methods and structures for improving etch profile of underlying layers
TOKYO ELECTRON LTD0 citations50
US11756790B2Sep 12, 2023
Method for patterning a dielectric layer
TOKYO ELECTRON LTD0 citations50
US10964587B2Mar 30, 2021
Atomic layer deposition for low-K trench protection during etch
TOKYO ELECTRON LTD0 citations50