Inventor
HU SHAN
US16 patents
⚠️ This page may combine multiple inventors who share the name “HU SHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
13 patentsUS11424123B2Aug 23, 2022
Forming a semiconductor feature using atomic layer etch
TOKYO ELECTRON LTD1 citations62
US12148624B2Nov 19, 2024
Wet etch process and method to control fin height and channel area in a fin field effect transistor (FinFET)
TOKYO ELECTRON LTD0 citations59
US12100598B2Sep 24, 2024
Methods for planarizing a substrate using a combined wet etch and chemical mechanical polishing (CMP) process
TOKYO ELECTRON LTD1 citations59
US11289325B2Mar 29, 2022
Radiation of substrates during processing and systems thereof
TOKYO ELECTRON LTD0 citations59
US12243749B2Mar 4, 2025
Methods to provide uniform wet etching of material within high aspect ratio features provided on a patterned substrate
TOKYO ELECTRON LTD0 citations58
US12100599B2Sep 24, 2024
Wet etch process and method to provide uniform etching of material formed within features having different critical dimension (CD)
TOKYO ELECTRON LTD0 citations58
US11532517B2Dec 20, 2022
Localized etch stop layer
TOKYO ELECTRON LTD0 citations51
US12482702B2Nov 25, 2025
Wet etch process and methods to form air gaps between metal interconnects
TOKYO ELECTRON LTD0 citations48
US12148625B2Nov 19, 2024
Methods to prevent surface charge induced cd-dependent etching of material formed within features on a patterned substrate
TOKYO ELECTRON LTD0 citations48
US12506019B2Dec 23, 2025
Wafer chuck designs and methods for retaining a processing liquid on a surface of a semiconductor wafer
TOKYO ELECTRON LTD0 citations47
US12400872B2Aug 26, 2025
Sacrificial capping layer for gate protection
TOKYO ELECTRON LTD0 citations47
US12103052B2Oct 1, 2024
Method and single wafer processing system for processing of semiconductor wafers
TOKYO ELECTRON LTD0 citations46
US12288698B2Apr 29, 2025
Methods for retaining a processing liquid on a surface of a semiconductor substrate
TOKYO ELECTRON LTD0 citations44