Inventor
IWASAKI TATSUYA
JP130 patents
⚠️ This page may combine multiple inventors who share the name “IWASAKI TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
39 patentsUS8003981B2Aug 23, 2011
Field effect transistor using oxide film for channel and method of manufacturing the same
CANON KK187 citations99
US7956361B2Jun 7, 2011
Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CANON KK306 citations99
US7935582B2May 3, 2011
Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CANON KK328 citations99
US7872259B2Jan 18, 2011
Light-emitting device
CANON KK156 citations99
US7791074B2Sep 7, 2010
Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CANON KK601 citations99
US7453087B2Nov 18, 2008
Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
CANON KK3,999 citations99
US6720728B2Apr 13, 2004
Devices containing a carbon nanotube
CANON KK78 citations99
US6628053B1Sep 30, 2003
Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting device
CANON KK265 citations99
US6476409B2Nov 5, 2002
Nano-structures, process for preparing nano-structures and devices
CANON KK118 citations99
US6278231B1Aug 21, 2001
Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
CANON KK216 citations99
US6171162B1Jan 9, 2001
Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof
CANON KK117 citations99
US6147449ANov 14, 2000
Electron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereof
CANON KK134 citations99
US7906780B2Mar 15, 2011
Field effect transistor
CANON KK59 citations98
US7829444B2Nov 9, 2010
Field effect transistor manufacturing method
CANON KK140 citations98
US7791082B2Sep 7, 2010
Semiconductor apparatus and method of manufacturing the same
CANON KK114 citations98
US7411209B2Aug 12, 2008
Field-effect transistor and method for manufacturing the same
CANON KK4,186 citations98
US7129466B2Oct 31, 2006
Color image pickup device and color light-receiving device
CANON KK107 citations98
US6936854B2Aug 30, 2005
Optoelectronic substrate
CANON KK71 citations98
US6838297B2Jan 4, 2005
Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
CANON KK107 citations98
US6525461B1Feb 25, 2003
Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device
CANON KK87 citations98
US7148619B2Dec 12, 2006
Electronic device containing a carbon nanotube
CANON KK36 citations96
US6979244B2Dec 27, 2005
Method of manufacturing an electronic device containing a carbon nanotube
CANON KK33 citations96
US6610463B1Aug 26, 2003
Method of manufacturing structure having pores
CANON KK92 citations96
US6464853B1Oct 15, 2002
Method of producing structure having narrow pores by anodizing
CANON KK65 citations96
US6214738B1Apr 10, 2001
Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method
CANON KK55 citations96
US5593335AJan 14, 1997
Method of manufacturing an electron source
CANON KK58 citations96
US5591061AJan 7, 1997
Apparatus for manufacturing electron source and image forming apparatus
CANON KK94 citations96
US7696513B2Apr 13, 2010
Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
CANON KK52 citations94
US7964871B2Jun 21, 2011
Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
CANON KK30 citations93
US7319069B2Jan 15, 2008
Structure having pores, device using the same, and manufacturing methods therefor
CANON KK31 citations93
US6970610B2Nov 29, 2005
Optical transmission sheet, optoelectric apparatus, and optical transmission method
CANON KK20 citations93
US6855025B2Feb 15, 2005
Structure and a process for its production
CANON KK20 citations93
US6784007B2Aug 31, 2004
Nano-structures, process for preparing nano-structures and devices
CANON KK34 citations93
US6555957B1Apr 29, 2003
Electron beam apparatus and image-forming apparatus
CANON KK15 citations93
US6459207B1Oct 1, 2002
Electron beam apparatus and image-forming apparatus
CANON KK17 citations93
US6348761B1Feb 19, 2002
Electron beam apparatus and image-forming apparatus
CANON KK34 citations93
US6283815B1Sep 4, 2001
Electron source and image forming apparatus as well as method of providing the same with means for maintaining activated state thereof
CANON KK31 citations93
US6270571B1Aug 7, 2001
Method for producing narrow wires comprising titanium oxide, and narrow wires and structures produced by the same method
CANON KK48 citations93
US6231412B1May 15, 2001
Method of manufacturing and adjusting electron source array
CANON KK40 citations93
TOKYO ELECTRON LTD
5 patentsUS5718763AFeb 17, 1998
Resist processing apparatus for a rectangular substrate
TOKYO ELECTRON LTD154 citations99
US6062241AMay 16, 2000
Substrate conveying device and substrate conveying method
TOKYO ELECTRON LTD48 citations96
US5518552AMay 21, 1996
Method for scrubbing and cleaning substrate
TOKYO ELECTRON LTD54 citations95
US5345639ASep 13, 1994
Device and method for scrubbing and cleaning substrate
TOKYO ELECTRON LTD67 citations95
US6193807B1Feb 27, 2001
Substrate conveying device and substrate conveying method
TOKYO ELECTRON LTD22 citations93
ITAGAKI NAHO
3 patentsIWASAKI TATSUYA
2 patentsUS8154024B2Apr 10, 2012
Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
IWASAKI TATSUYA269 citations99
US8164090B2Apr 24, 2012
Field effect transistor and process for production thereof
IWASAKI TATSUYA115 citations97
GOYAL AMITA
1 patentShowing the top 50 of 130 patents by PatentIndex Score.