Inventor

TYAGI ANURAG

US30 patents

⚠️ This page may combine multiple inventors who share the name “TYAGI ANURAG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TYAGI ANURAG

META PLATFORMS TECH LLC

Monolithic light source with integrated optics based on nonlinear frequency conversion

In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

Apparatus, system, and method for stepping up high voltages within small form factors via optical couplings including an array of photovoltaic cells optically coupled to parallelly connected light emitting devices via a transfer medium

Light emission display element and device with polarized and angularly-controlled output

In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

Wafer-level 3D integration of high voltage optical transformer

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

High refractive index birefringent organic solid crystal and methods of making thereof

INTUIT INC

System and method for detecting and mapping data fields for forms in a financial management system

System and method for detecting and mapping data fields for forms in a financial management system

System and method for reliable extraction and mapping of data to and from customer forms

System and method for reliable extraction and mapping of data to and from customer forms

System and method for detecting and mapping data fields for forms in a financial management system

UNIV CALIFORNIA

High light extraction efficiency nitride based light emitting diode by surface roughening

Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction

ZHONG HONG

High light extraction efficiency nitride based light emitting diode by surface roughening

High light extraction efficiency nitride based light emitting diode by surface roughening

Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

CHAKRABORTY ARPAN

Miscut bulk substrates

Method for smoothing surface of a substrate containing gallium and nitrogen

OHTA HIROAKI

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

NAKAMURA SHUJI

Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates

FACEBOOK TECH LLC

Surface emitting light source with lateral variant refractive index profile

SORAA INC

Method and system for epitaxy processes on miscut bulk substrates

SPECK JAMES S

Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning

HSU PO SHAN

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction