Inventor
NIWA KATUHIDE
JP2 patents
Patents
2 patentsUS5877095AMar 2, 1999
Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
NIPPON DENSO CO577 citations98
US5592004AJan 7, 1997
Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
NIPPON DENSO CO16 citations80