Inventor

GANDIKOTA SRINIVAS

US160 patents

⚠️ This page may combine multiple inventors who share the name “GANDIKOTA SRINIVAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GANDIKOTA SRINIVAS

APPLIED MATERIALS INC

Methods for depositing tungsten layers employing atomic layer deposition techniques

Ruthenium as an underlayer for tungsten film deposition

Methods for depositing tungsten layers employing atomic layer deposition techniques

Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application

Continuous, non-agglomerated adhesion of a seed layer to a barrier layer

Deposition and treatment of films for patterning

Methods for self-aligned patterning

Method of enabling seamless cobalt gap-fill

Methods for depositing fluorine/carbon-free conformal tungsten

Methods for depositing fluorine/carbon-free conformal tungsten

Low resistivity tungsten PVD with enhanced ionization and RF power coupling

Ruthenium or cobalt as an underlayer for tungsten film deposition

Selective metal encapsulation schemes

Electropolishing of metallic interconnects

Electroless deposition method

Electroless deposition method

Method for enhancing the adhesion of copper deposited by chemical vapor deposition

Electroless deposition method over sub-micron apertures

Seam healing using high pressure anneal

Selective deposition for simplified process flow of pillar formation

CVD based oxide-metal multi structure for 3D NAND memory devices

Methods for gapfill in high aspect ratio structures

Atomic layer deposition methods for metal gate electrodes

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Post deposition treatments for CVD cobalt films

Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride

Method and apparatus for reducing organic depletion during non-processing time periods

Atomic layer deposition chamber with thermal lid

Seamless gap fill

High-density low temperature carbon films for hardmask and other patterning applications

Linerless continuous amorphous metal films

Graphene diffusion barrier

Methods of lowering wordline resistance

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Seamless tungsten fill by tungsten oxidation-reduction

Metal deposition methods

Conformal amorphous silicon as nucleation layer for W ALD process

Method of enabling seamless cobalt gap-fill

Conformal doping in 3D si structure using conformal dopant deposition

Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition

Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices

Methods for manufacturing metal gates

Deposition of metal films using alane-based precursors

GANGULI SESHADRI

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Metal gate structures and methods for forming thereof

ZOPE BHUSHAN N

Method of enabling seamless cobalt gap-fill

CAO YONG

Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming

LEI YU

Post deposition treatments for CVD cobalt films

WANG RONGJUN

Substrate device having a tuned work function and methods of forming thereof

WANG WEI D

Krypton sputtering of low resistivity tungsten