P

Inventor

CHAE DONG HYUK

KR86 patents
⚠️ This page may combine multiple inventors who share the name “CHAE DONG HYUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

35 patents
US7890818B2Feb 15, 2011

Read level control apparatuses and methods

SAMSUNG ELECTRONICS CO LTD122 citations99
US7379333B2May 27, 2008

Page-buffer and non-volatile semiconductor memory including page buffer

SAMSUNG ELECTRONICS CO LTD34 citations96
US7298648B2Nov 20, 2007

Page buffer and multi-state nonvolatile memory device including the same

SAMSUNG ELECTRONICS CO LTD39 citations96
US7269068B2Sep 11, 2007

Flash memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD45 citations96
US7876614B2Jan 25, 2011

Multi-bit flash memory device and program and read methods thereof

SAMSUNG ELECTRONICS CO LTD19 citations93
US7596022B2Sep 29, 2009

Method for programming a multi-level non-volatile memory device

SAMSUNG ELECTRONICS CO LTD23 citations93
US7545677B2Jun 9, 2009

Nonvolatile memory device and methods of programming and reading the same

SAMSUNG ELECTRONICS CO LTD41 citations93
US7433235B2Oct 7, 2008

Bias circuits and methods for enhanced reliability of flash memory device

SAMSUNG ELECTRONICS CO LTD15 citations93
US7403429B2Jul 22, 2008

Method of erasing data with improving reliability in a nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD45 citations93
US7313020B2Dec 25, 2007

Multi-level nonvolatile semiconductor memory device and method for reading the same

SAMSUNG ELECTRONICS CO LTD23 citations93
US7158418B2Jan 2, 2007

Non-volatile memory device capable of changing increment of program voltage to mode of operation

SAMSUNG ELECTRONICS CO LTD25 citations93
US7072238B2Jul 4, 2006

Semiconductor device capable of generating ripple-free voltage internally

SAMSUNG ELECTRONICS CO LTD35 citations93
US7038949B2May 2, 2006

Non-volatile memory device capable of changing increment of program voltage according to mode of operation

SAMSUNG ELECTRONICS CO LTD40 citations93
US10909032B2Feb 2, 2021

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD6 citations84
US10671529B2Jun 2, 2020

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD4 citations84
US8046525B2Oct 25, 2011

Nonvolatile semiconductor memory device with advanced multi-page program operation

SAMSUNG ELECTRONICS CO LTD7 citations84
US7983082B2Jul 19, 2011

Apparatus and method of multi-bit programming

SAMSUNG ELECTRONICS CO LTD9 citations84
US7924624B2Apr 12, 2011

Memory device and memory programming method

SAMSUNG ELECTRONICS CO LTD8 citations84
US7911850B2Mar 22, 2011

Method of programming flash memory device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7903459B2Mar 8, 2011

Memory devices and methods for determining data of bit layers based on detected error bits

SAMSUNG ELECTRONICS CO LTD16 citations84
US7898853B2Mar 1, 2011

Multi-bit data memory system and read operation

SAMSUNG ELECTRONICS CO LTD7 citations84
US7885111B2Feb 8, 2011

Flash memory device and method for providing initialization data

SAMSUNG ELECTRONICS CO LTD12 citations84
US7738298B2Jun 15, 2010

Flash memory device

SAMSUNG ELECTRONICS CO LTD8 citations84
US7508705B2Mar 24, 2009

Method for programming a multi-level non-volatile memory device

SAMSUNG ELECTRONICS CO LTD19 citations84
US7439797B2Oct 21, 2008

Semiconductor device including a high voltage generation circuit and method of generating a high voltage

SAMSUNG ELECTRONICS CO LTD16 citations84
US7272047B2Sep 18, 2007

Wordline voltage generating circuit including a voltage dividing circuit for reducing effects of parasitic capacitance

SAMSUNG ELECTRONICS CO LTD11 citations84
US7130240B2Oct 31, 2006

Semiconductor memory system and method for multi-sector erase operation

SAMSUNG ELECTRONICS CO LTD11 citations84
US6889268B2May 3, 2005

Multi-chip system having a continuous burst read mode of operation

SAMSUNG ELECTRONICS CO LTD17 citations84
US7724575B2May 25, 2010

Page-buffer and non-volatile semiconductor memory including page buffer

SAMSUNG ELECTRONICS CO LTD7 citations74
US7684250B2Mar 23, 2010

Flash memory device with reduced coupling effect among cells and method of driving the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7567460B2Jul 28, 2009

Method of programming flash memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US7480177B2Jan 20, 2009

Page buffer and multi-state nonvolatile memory device including the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7420856B2Sep 2, 2008

Methods and circuits for generating a high voltage and related semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations74
US7254076B2Aug 7, 2007

Semiconductor memory device for improving response margin of redundancy flag signal and redundancy driving method for the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US8693247B2Apr 8, 2014

Non-volatile memory device and method for programming the device, and memory system

SAMSUNG ELECTRONICS CO LTD4 citations73

HYUNDAI MOTOR CO LTD

3 patents

SK HYNIX INC

3 patents

LEE SUNG-SOO

2 patents

JO NAM PHIL

2 patents

KONG JUN JIN

2 patents

CHO KYOUNG LAE

1 patent

KIM JAE HONG

1 patent

YOON SANG YONG

1 patent

Showing the top 50 of 86 patents by PatentIndex Score.