Inventor
CHAE DONG HYUK
KR86 patents
⚠️ This page may combine multiple inventors who share the name “CHAE DONG HYUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
35 patentsUS7890818B2Feb 15, 2011
Read level control apparatuses and methods
SAMSUNG ELECTRONICS CO LTD122 citations99
US7379333B2May 27, 2008
Page-buffer and non-volatile semiconductor memory including page buffer
SAMSUNG ELECTRONICS CO LTD34 citations96
US7298648B2Nov 20, 2007
Page buffer and multi-state nonvolatile memory device including the same
SAMSUNG ELECTRONICS CO LTD39 citations96
US7269068B2Sep 11, 2007
Flash memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD45 citations96
US7876614B2Jan 25, 2011
Multi-bit flash memory device and program and read methods thereof
SAMSUNG ELECTRONICS CO LTD19 citations93
US7596022B2Sep 29, 2009
Method for programming a multi-level non-volatile memory device
SAMSUNG ELECTRONICS CO LTD23 citations93
US7545677B2Jun 9, 2009
Nonvolatile memory device and methods of programming and reading the same
SAMSUNG ELECTRONICS CO LTD41 citations93
US7433235B2Oct 7, 2008
Bias circuits and methods for enhanced reliability of flash memory device
SAMSUNG ELECTRONICS CO LTD15 citations93
US7403429B2Jul 22, 2008
Method of erasing data with improving reliability in a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD45 citations93
US7313020B2Dec 25, 2007
Multi-level nonvolatile semiconductor memory device and method for reading the same
SAMSUNG ELECTRONICS CO LTD23 citations93
US7158418B2Jan 2, 2007
Non-volatile memory device capable of changing increment of program voltage to mode of operation
SAMSUNG ELECTRONICS CO LTD25 citations93
US7072238B2Jul 4, 2006
Semiconductor device capable of generating ripple-free voltage internally
SAMSUNG ELECTRONICS CO LTD35 citations93
US7038949B2May 2, 2006
Non-volatile memory device capable of changing increment of program voltage according to mode of operation
SAMSUNG ELECTRONICS CO LTD40 citations93
US10909032B2Feb 2, 2021
Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays
SAMSUNG ELECTRONICS CO LTD6 citations84
US10671529B2Jun 2, 2020
Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays
SAMSUNG ELECTRONICS CO LTD4 citations84
US8046525B2Oct 25, 2011
Nonvolatile semiconductor memory device with advanced multi-page program operation
SAMSUNG ELECTRONICS CO LTD7 citations84
US7983082B2Jul 19, 2011
Apparatus and method of multi-bit programming
SAMSUNG ELECTRONICS CO LTD9 citations84
US7924624B2Apr 12, 2011
Memory device and memory programming method
SAMSUNG ELECTRONICS CO LTD8 citations84
US7911850B2Mar 22, 2011
Method of programming flash memory device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7903459B2Mar 8, 2011
Memory devices and methods for determining data of bit layers based on detected error bits
SAMSUNG ELECTRONICS CO LTD16 citations84
US7898853B2Mar 1, 2011
Multi-bit data memory system and read operation
SAMSUNG ELECTRONICS CO LTD7 citations84
US7885111B2Feb 8, 2011
Flash memory device and method for providing initialization data
SAMSUNG ELECTRONICS CO LTD12 citations84
US7738298B2Jun 15, 2010
Flash memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US7508705B2Mar 24, 2009
Method for programming a multi-level non-volatile memory device
SAMSUNG ELECTRONICS CO LTD19 citations84
US7439797B2Oct 21, 2008
Semiconductor device including a high voltage generation circuit and method of generating a high voltage
SAMSUNG ELECTRONICS CO LTD16 citations84
US7272047B2Sep 18, 2007
Wordline voltage generating circuit including a voltage dividing circuit for reducing effects of parasitic capacitance
SAMSUNG ELECTRONICS CO LTD11 citations84
US7130240B2Oct 31, 2006
Semiconductor memory system and method for multi-sector erase operation
SAMSUNG ELECTRONICS CO LTD11 citations84
US6889268B2May 3, 2005
Multi-chip system having a continuous burst read mode of operation
SAMSUNG ELECTRONICS CO LTD17 citations84
US7724575B2May 25, 2010
Page-buffer and non-volatile semiconductor memory including page buffer
SAMSUNG ELECTRONICS CO LTD7 citations74
US7684250B2Mar 23, 2010
Flash memory device with reduced coupling effect among cells and method of driving the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7567460B2Jul 28, 2009
Method of programming flash memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7480177B2Jan 20, 2009
Page buffer and multi-state nonvolatile memory device including the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7420856B2Sep 2, 2008
Methods and circuits for generating a high voltage and related semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations74
US7254076B2Aug 7, 2007
Semiconductor memory device for improving response margin of redundancy flag signal and redundancy driving method for the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US8693247B2Apr 8, 2014
Non-volatile memory device and method for programming the device, and memory system
SAMSUNG ELECTRONICS CO LTD4 citations73
HYUNDAI MOTOR CO LTD
3 patentsSK HYNIX INC
3 patentsLEE SUNG-SOO
2 patentsJO NAM PHIL
2 patentsUS8479085B2Jul 2, 2013
Memory system with error correction decoder architecture having reduced latency and increased throughput
JO NAM PHIL8 citations83
US8667365B2Mar 4, 2014
Flash memory system that uses an interleaving scheme for increasing data transfer performance between a memory device and a controller and a method therof
JO NAM PHIL5 citations72
KONG JUN JIN
2 patentsCHO KYOUNG LAE
1 patentKIM JAE HONG
1 patentYOON SANG YONG
1 patentShowing the top 50 of 86 patents by PatentIndex Score.