P

Inventor

LIN ZHENG-JUN

TW27 patents

Patents

27 patents
US10755780B2Aug 25, 2020

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11984162B2May 14, 2024

Hybrid self-tracking reference circuit for RRAM cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11348638B2May 31, 2022

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11636896B2Apr 25, 2023

Memory cell array circuit and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10930344B2Feb 23, 2021

RRAM circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12322442B2Jun 3, 2025

Resistive memory with low voltage operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315562B2May 27, 2025

RRAM circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308073B2May 20, 2025

RRAM circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283317B2Apr 22, 2025

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12259783B2Mar 25, 2025

Semiconductor device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027205B2Jul 2, 2024

Resistive memory with low voltage operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12014776B2Jun 18, 2024

RRAM circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942150B2Mar 26, 2024

RRAM circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11837287B2Dec 5, 2023

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11609815B1Mar 21, 2023

Semicoductor device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527285B2Dec 13, 2022

RRAM current limiting method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11393528B2Jul 19, 2022

RRAM circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10950303B2Mar 16, 2021

RRAM current limiting circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230323B2Feb 18, 2025

Memory cell array circuit and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230320B2Feb 18, 2025

Dynamic inhibit voltage to reduce write power for random-access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12165705B2Dec 10, 2024

Memory cell array circuit and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12131776B2Oct 29, 2024

Non-volatile memory based compute-in-memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11735263B2Aug 22, 2023

Memory cell array circuit and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11715518B2Aug 1, 2023

Dynamic inhibit voltage to reduce write power for random-access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11495294B2Nov 8, 2022

Hybrid self-tracking reference circuit for RRAM cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12248331B2Mar 11, 2025

Low-dropout (LDO) regulator with a feedback circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11442482B2Sep 13, 2022

Low-dropout (LDO) regulator with a feedback circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51