Inventor
HUANG YONG-SHENG
TW18 patents
⚠️ This page may combine multiple inventors who share the name “HUANG YONG-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS10784278B2Sep 22, 2020
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12317568B2May 27, 2025
Semiconductor structure including source/drain regions at different levels within semiconductor layer and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12219770B2Feb 4, 2025
Integrated chip with a gate structure disposed within a trench
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742434B2Aug 29, 2023
Memory device having recessed active region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735636B2Aug 22, 2023
Integrated chip with a gate structure over a recess
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723207B2Aug 8, 2023
Integrated chip with a gate structure disposed within a trench
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545584B2Jan 3, 2023
Memory device having recessed active region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11462563B2Oct 4, 2022
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11417741B2Aug 16, 2022
Integrated chip with a gate structure over a recess
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183571B2Nov 23, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10998450B1May 4, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12193227B2Jan 7, 2025
Etch method for opening a source line in flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11778816B2Oct 3, 2023
Etch method for opening a source line in flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11587939B2Feb 21, 2023
Etch method for opening a source line in flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11239245B2Feb 1, 2022
Etch method for opening a source line in flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12588256B2Mar 24, 2026
Method for manufacturing semiconductor structure and semiconductor structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48