Inventor
QIU YUNSONG
CN27 patents
Patents
27 patentsUS12310005B2May 20, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC2 citations74
US12402303B2Aug 26, 2025
Semiconductor structure having a plurality of bit lines spaced apart from each other in a first direction and extend in a second direction
CHANGXIN MEMORY TECH INC0 citations62
US12300744B2May 13, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations62
US11854862B2Dec 26, 2023
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC1 citations62
US12543306B2Feb 3, 2026
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations52
US12471314B2Nov 11, 2025
Semiconductor structure and fabrication method thereof
CHANGXIN MEMORY TECH INC0 citations52
US12426250B2Sep 23, 2025
Semiconductor structure, method for manufacturing same and memory
CHANGXIN MEMORY TECH INC0 citations52
US12408326B2Sep 2, 2025
Semiconductor structure and formation method thereof, and memory
CHANGXIN MEMORY TECH INC0 citations52
US12402294B2Aug 26, 2025
Semiconductor structure and fabrication method thereof
CHANGXIN MEMORY TECH INC0 citations52
US12376289B2Jul 29, 2025
Semiconductor structure and method for fabricating same
CHANGXIN MEMORY TECH INC0 citations52
US12369311B2Jul 22, 2025
Semiconductor device and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations52
US12342534B2Jun 24, 2025
Method for fabricating a semiconductor structure with pillar array and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations52
US12557272B2Feb 17, 2026
Semiconductor structure and method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations51
US12550312B2Feb 10, 2026
Three-dimensional memory and formation method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12513893B2Dec 30, 2025
Semiconductor structure and method for fabricating same
CHANGXIN MEMORY TECH INC0 citations51
US12446207B2Oct 14, 2025
Semiconductor device having bottom bit line and narrow channel, and forming method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12446212B2Oct 14, 2025
Semiconductor structure, method for manufacturing same and memory
CHANGXIN MEMORY TECH INC0 citations51
US12426251B2Sep 23, 2025
Semiconductor structure, method for manufacturing semiconductor structure, and memory
CHANGXIN MEMORY TECH INC0 citations51
US12376283B2Jul 29, 2025
Semiconductor structure, method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations51
US12369297B2Jul 22, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12336169B2Jun 17, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12317473B2May 27, 2025
Semiconductor device having plurality of trenches with different depth
CHANGXIN MEMORY TECH INC0 citations51
US12309997B2May 20, 2025
Semiconductor structure and method for fabricating same
CHANGXIN MEMORY TECH INC0 citations51
US12309998B2May 20, 2025
Semiconductor structure and method for manufacturing semiconductor structure
CHANGXIN MEMORY TECH INC0 citations51
US12225718B2Feb 11, 2025
Semiconductor structure and method for forming semiconductor structure
CHANGXIN MEMORY TECH INC0 citations51
US12426256B2Sep 23, 2025
Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same
CHANGXIN MEMORY TECH INC0 citations50
US12389586B2Aug 12, 2025
Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depth
CHANGXIN MEMORY TECH INC0 citations50