Inventor

JASTRZEBSKI LUBOMIR L

US37 patents

⚠️ This page may combine multiple inventors who share the name “JASTRZEBSKI LUBOMIR L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JASTRZEBSKI LUBOMIR L

RCA CORP

CMOS Structure incorporating vertical IGFETS

Vertically integrated IGFET device

Method for growing monocrystalline silicon through mask layer

Method for fabricating a self-aligned vertical IGFET

Method for growing a low defect monocrystalline layer on a mask

Method for thinning silicon

CCD Imagers with substrates having drift field

Semiconductor imagers

Fabricating of a CMOS FET with reduced latchup susceptibility

Method for forming uniformly thick selective epitaxial silicon

Method for forming a void-free monocrystalline epitaxial layer on a mask

Method for growing monocrystalline silicon on a mask layer

Method of depositing uniformly thick selective epitaxial silicon

Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer

Recessed oxide method for making a silicon-on-insulator substrate

Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer

Method to determine the crystalline properties of an interface of two materials by an optical technique

Vertical IGFET with internal gate and method for making same

Method to determine the crystalline properties of an interface of two materials by photovoltage phenomenon

Method for determining oxygen content in semiconductor material

Vertical IGFET with internal gate and method for making same

Arrangement of semiconductor devices on a wafer

Method of making CCD imagers with reduced defects

GEN ELECTRIC

Method for making a silicon-on-insulator substrate

Method of making integrated circuit with pair of MOS field effect transistors sharing a common source/drain region

High temperature annealing to improve SIMOX characteristics

Optical reflectance method of examining a SIMOX article

Determination of substrate temperature used during oxygen implantation of SIMOX wafer

SEMICONDUCTOR DIAGNOSTICS INC

Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current

Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer

Determining composition of mixed dielectrics

SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD

Micro photoluminescence imaging with optical filtering

Micro photoluminescence imaging

Micro photoluminescence imaging with optical filtering

HARRIS CORP

Method for forming dielectrically isolated transistor

MASSACHUSETTS INST TECHNOLOGY

Method of epitaxial growth employing electromigration

Semilab SDI LLC

Micro photoluminescence imaging