Inventor

KUZUHARA MASAAKI

JP25 patents

⚠️ This page may combine multiple inventors who share the name “KUZUHARA MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUZUHARA MASAAKI

NEC CORP

Semiconductor device with schottky electrode having high schottky barrier

Semiconductor device

Fet having non-overlapping field control electrode between gate and drain

Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances

Hetero-junction field effect transistor having an intermediate layer

Field effect transistor

Field-effect transistor having group III nitride electrode structure

Field-effect transistor

Semiconductor device

Compound semiconductor field effect transistor

Method of manufacturing semiconductor device with sidewall metal layers

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

Field effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gas

Semiconductor device having Schottky junction electrode

Hetero-junction field effect transistor

Field effect transistor having a multi-layer channel

Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer

Electrode, method for producing same and semiconductor device using same

Field effect transistor having an improved transistor characteristic

Quasi one-dimensional electron gas field effect transistor

Ohmic electrode structure of nitride semiconductor device

High speed non-volatile programmable read only memory device fabricated by using selective doping technology

Electrode, method for producing same and semiconductor device using same

NEC COMPOUND SEMICONDUCTOR

Field effect transistor

HASHIMOTO SHIN

III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device