Inventor
REINBERG ALAN
US9 patents
Patents
9 patentsUS5254218AOct 19, 1993
Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer
MICRON TECHNOLOGY INC85 citations95
US6005801ADec 21, 1999
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC23 citations91
US6157566ADec 5, 2000
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC7 citations73
US6287958B1Sep 11, 2001
Method of manufacturing a self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device
MICRON TECHNOLOGY INC6 citations72
US6157565ADec 5, 2000
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC7 citations71
US5973954AOct 26, 1999
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC9 citations69
US6479379B2Nov 12, 2002
Self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device
MICRON TECHNOLOGY INC5 citations61
US6181594B1Jan 30, 2001
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC0 citations51
US6404669B2Jun 11, 2002
Reduced leakage DRAM storage unit
MICRON TECHNOLOGY INC0 citations49