Inventor
BERTIN CLAUDE L
US247 patents
⚠️ This page may combine multiple inventors who share the name “BERTIN CLAUDE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
29 patentsUS6358627B2Mar 19, 2002
Rolling ball connector
IBM164 citations99
US6271059B1Aug 7, 2001
Chip interconnection structure using stub terminals
IBM274 citations99
US5870350AFeb 9, 1999
High performance, high bandwidth memory bus architecture utilizing SDRAMs
IBM317 citations99
US5571754ANov 5, 1996
Method of fabrication of endcap chip with conductive, monolithic L-connect for multichip stack
IBM191 citations99
US5567654AOct 22, 1996
Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
IBM150 citations99
US5563086AOct 8, 1996
Integrated memory cube, structure and fabrication
IBM195 citations99
US5561622AOct 1, 1996
Integrated memory cube structure
IBM250 citations99
US5478781ADec 26, 1995
Polyimide-insulated cube package of stacked semiconductor device chips
IBM174 citations99
US5466634ANov 14, 1995
Electronic modules with interconnected surface metallization layers and fabrication methods therefore
IBM153 citations99
US6420925B1Jul 16, 2002
Programmable latch device with integrated programmable element
IBM91 citations98
US6396120B1May 28, 2002
Silicon anti-fuse structures, bulk and silicon on insulator fabrication methods and application
IBM84 citations98
US6346846B1Feb 12, 2002
Methods and apparatus for blowing and sensing antifuses
IBM109 citations98
US6255899B1Jul 3, 2001
Method and apparatus for increasing interchip communications rates
IBM136 citations98
US6233184B1May 15, 2001
Structures for wafer level test and burn-in
IBM102 citations98
US6177729B1Jan 23, 2001
Rolling ball connector
IBM84 citations98
US6060746AMay 9, 2000
Power transistor having vertical FETs and method for making same
IBM90 citations98
US5896404AApr 20, 1999
Programmable burst length DRAM
IBM130 citations98
US5617351AApr 1, 1997
Three-dimensional direct-write EEPROM arrays and fabrication methods
IBM215 citations98
US5468663ANov 21, 1995
Method of fabricating three-dimensional direct-write EEPROM arrays
IBM115 citations98
US5467305ANov 14, 1995
Three-dimensional direct-write EEPROM arrays and fabrication methods
IBM276 citations98
US5426566AJun 20, 1995
Multichip integrated circuit packages and systems
IBM166 citations98
US5399516AMar 21, 1995
Method of making shadow RAM cell having a shallow trench EEPROM
IBM185 citations98
US5270261ADec 14, 1993
Three dimensional multichip package methods of fabrication
IBM332 citations98
US5202754AApr 13, 1993
Three-dimensional multichip packages and methods of fabrication
IBM256 citations98
US5502667AMar 26, 1996
Integrated multichip memory module structure
IBM291 citations97
US5196722AMar 23, 1993
Shadow ram cell having a shallow trench eeprom
IBM128 citations97
US6633055B2Oct 14, 2003
Electronic fuse structure and method of manufacturing
IBM69 citations96
US6574763B1Jun 3, 2003
Method and apparatus for semiconductor integrated circuit testing and burn-in
IBM61 citations96
US6518112B2Feb 11, 2003
High performance, low power vertical integrated CMOS devices
IBM67 citations96
NANTERO INC
17 patentsUS7835170B2Nov 16, 2010
Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
NANTERO INC131 citations99
US7161218B2Jan 9, 2007
One-time programmable, non-volatile field effect devices and methods of making same
NANTERO INC59 citations99
US7161403B2Jan 9, 2007
Storage elements using nanotube switching elements
NANTERO INC165 citations99
US7115901B2Oct 3, 2006
Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
NANTERO INC188 citations99
US7115960B2Oct 3, 2006
Nanotube-based switching elements
NANTERO INC147 citations99
US6990009B2Jan 24, 2006
Nanotube-based switching elements with multiple controls
NANTERO INC214 citations99
US6982903B2Jan 3, 2006
Field effect devices having a source controlled via a nanotube switching element
NANTERO INC74 citations99
US9299430B1Mar 29, 2016
Methods for reading and programming 1-R resistive change element arrays
NANTERO INC39 citations98
US7782650B2Aug 24, 2010
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
NANTERO INC70 citations98
US7071023B2Jul 4, 2006
Nanotube device structure and methods of fabrication
NANTERO INC78 citations98
US6944054B2Sep 13, 2005
NRAM bit selectable two-device nanotube array
NANTERO INC87 citations98
US7781862B2Aug 24, 2010
Two-terminal nanotube devices and systems and methods of making same
NANTERO INC83 citations97
US7479654B2Jan 20, 2009
Memory arrays using nanotube articles with reprogrammable resistance
NANTERO INC57 citations97
US7294877B2Nov 13, 2007
Nanotube-on-gate FET structures and applications
NANTERO INC125 citations97
US7416993B2Aug 26, 2008
Patterned nanowire articles on a substrate and methods of making the same
NANTERO INC46 citations96
US7301802B2Nov 27, 2007
Circuit arrays having cells with combinations of transistors and nanotube switching elements
NANTERO INC21 citations96
US7112493B2Sep 26, 2006
Method of making non-volatile field effect devices and arrays of same
NANTERO INC27 citations96
BERTIN CLAUDE L
3 patentsUS8217490B2Jul 10, 2012
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
BERTIN CLAUDE L97 citations98
US8183665B2May 22, 2012
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
BERTIN CLAUDE L102 citations98
US8102018B2Jan 24, 2012
Nonvolatile resistive memories having scalable two-terminal nanotube switches
BERTIN CLAUDE L67 citations98
MANNING H MONTGOMERY
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