Inventor

HUANG X M HENRY

US27 patents

⚠️ This page may combine multiple inventors who share the name “HUANG X M HENRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG X M HENRY

NANTERO INC

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Two-terminal nanotube devices and systems and methods of making same

Memory arrays using nanotube articles with reprogrammable resistance

Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Non-volatile shadow latch using a nanotube switch

Two-terminal nanotube devices and systems and methods of making same

Nonvolatile nanotube switch elements using sidewall contacts

Non-linear resistive change memory cells and arrays

Double density nonvolatile nanotube switch memory cells

Methods for forming crosspoint arrays of resistive change memory cells

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Resistive change elements incorporating carbon based diode select devices

Stacked three-dimensional arrays of two terminal nanotube switching devices

Resistive change element array using vertically oriented bit lines

Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks

Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

Electrostatic discharge protection devices using carbon-based diodes

Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors

BERTIN CLAUDE L

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Memory arrays using nanotube articles with reprogrammable resistance

Two-terminal nanotube devices and systems and methods of making same

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same