Inventor

DAVIS ROBERT F

US54 patents

⚠️ This page may combine multiple inventors who share the name “DAVIS ROBERT F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DAVIS ROBERT F

UNIV NORTH CAROLINA STATE

Gallium nitride semiconductor structure including laterally offset patterned layers

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

Growth of beta-sic thin films and semiconductor devices fabricated thereon

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby

Implantation and electrical activation of dopants into monocrystalline silicon carbide

P-N junction diodes in silicon carbide

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Gallium nitride semiconductor structures including lateral gallium nitride layers

Platinum ohmic contact to p-type silicon carbide

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities

Germanium doped n-type aluminum nitride epitaxial layers

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

MADICO INC

Barrier laminate

Bright white protective laminates

Bright white protective laminates

Bright white protective laminates

DU PONT

Molded PVF laminar structures

Method of making fluoropolymer laminates

Fluoropolymer laminates

Embossable laminates

PROXY TECHNOLOGIES INC

Autonomous vehicle and method for coordinating the paths of multiple autonomous vehicles

Autonomous vehicle and method for coordinating the paths of multiple autonomous vehicles

NOERH CAROLINA STATE UNIVERSIT

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

CREE RESEARCH INC

Method of forming platinum ohmic contact to p-type silicon carbide

LUMENZ INC

Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities

ATO FINA CHEMICALS INC

Polyvinylidene fluoride coated articles from resins formable at high temperatures

KIDDE & CO WALTER

Modular fire protection system