Inventor
AMEEN MICHAEL S
US11 patents
Patents
11 patentsUS6274496B1Aug 14, 2001
Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing
TOKYO ELECTRON LTD391 citations99
US5834371ANov 10, 1998
Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
TOKYO ELECTRON LTD126 citations99
US5926737AJul 20, 1999
Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
TOKYO ELECTRON LTD213 citations98
US6368987B1Apr 9, 2002
Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
TOKYO ELECTRON LTD642 citations96
US6161500ADec 19, 2000
Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
TOKYO ELECTRON LTD814 citations96
US6143128ANov 7, 2000
Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
TOKYO ELECTRON LTD53 citations96
US6093645AJul 25, 2000
Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
TOKYO ELECTRON LTD54 citations96
US6635569B1Oct 21, 2003
Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
TOKYO ELECTRON LTD24 citations92
US6037252AMar 14, 2000
Method of titanium nitride contact plug formation
TOKYO ELECTRON LTD35 citations92
US5989652ANov 23, 1999
Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
TOKYO ELECTRON LTD38 citations92
US5972790AOct 26, 1999
Method for forming salicides
TOKYO ELECTRON LTD24 citations92