Inventor
YAMANE MASAO
JP27 patents
⚠️ This page may combine multiple inventors who share the name “YAMANE MASAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
11 patentsUS6765268B2Jul 20, 2004
Multiple transistors having a common gate pad between first group of drains and second group of drains
RENESAS TECH CORP51 citations96
US7307298B2Dec 11, 2007
Semiconductor device
RENESAS TECH CORP20 citations92
US6992528B2Jan 31, 2006
Semiconductor device
RENESAS TECH CORP14 citations92
US7256433B2Aug 14, 2007
Bipolar transistor and a method of manufacturing the same
RENESAS TECH CORP10 citations84
US7439622B2Oct 21, 2008
Semiconductor device
RENESAS TECH CORP5 citations74
US7141876B2Nov 28, 2006
Semiconductor device
RENESAS TECH CORP8 citations74
US6743691B2Jun 1, 2004
Semiconductor device and method for fabricating the same
RENESAS TECH CORP8 citations74
US7045877B2May 16, 2006
Semiconductor protection device
RENESAS TECH CORP7 citations73
US6708022B1Mar 16, 2004
Power amplification system and mobile radio communication terminal
RENESAS TECH CORP6 citations63
US6787817B2Sep 7, 2004
Compound semiconductor having a doped layer between the gate and an ohmic contact of an active region
RENESAS TECH CORP2 citations62
US6861905B2Mar 1, 2005
Power amplifier system and mobile communication terminal device
RENESAS TECH CORP0 citations42
HITACHI LTD
9 patentsUS5774792AJun 30, 1998
Low distortion switch
HITACHI LTD127 citations95
US5548138AAug 20, 1996
Semiconductor device with reduced tunnel resistance and circuitry using the same
HITACHI LTD35 citations92
US4914488AApr 3, 1990
Compound semiconductor structure and process for making same
HITACHI LTD26 citations92
US6678507B1Jan 13, 2004
Power amplifier system and mobile communication terminal device
HITACHI LTD19 citations84
US6573540B2Jun 3, 2003
Semiconductor device and method for fabricating the same
HITACHI LTD6 citations74
US6403991B1Jun 11, 2002
Semiconductor device and method for fabricating the same
HITACHI LTD11 citations74
US5381027AJan 10, 1995
Semiconductor device having a heterojunction and a two dimensional gas as an active layer
HITACHI LTD18 citations73
US5258631ANov 2, 1993
Semiconductor device having a two-dimensional electron gas as an active layer
HITACHI LTD13 citations73
US6639257B2Oct 28, 2003
Hetero-junction bipolar transistor having a dummy electrode
HITACHI LTD2 citations63