Inventor
LAMMERS STEFAN
US26 patents
⚠️ This page may combine multiple inventors who share the name “LAMMERS STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
21 patentsUS6819142B2Nov 16, 2004
Circuit for transforming a differential mode signal into a single ended signal with reduced standby current consumption
INFINEON TECHNOLOGIES AG63 citations96
US6353562B2Mar 5, 2002
Integrated semiconductor memory with redundant units for memory cells
INFINEON TECHNOLOGIES AG56 citations96
US6847225B2Jan 25, 2005
CML (current mode logic) OCD (off chip driver)—ODT (on die termination) circuit for bidirectional data transmission
INFINEON TECHNOLOGIES AG26 citations92
US6825707B2Nov 30, 2004
Current mode logic (CML) circuit concept for a variable delay element
INFINEON TECHNOLOGIES AG21 citations92
US6594176B2Jul 15, 2003
Current source and drain arrangement for magnetoresistive memories (MRAMs)
INFINEON TECHNOLOGIES AG22 citations92
US6594191B2Jul 15, 2003
Segmented write line architecture
INFINEON TECHNOLOGIES AG40 citations92
US6577527B2Jun 10, 2003
Method for preventing unwanted programming in an MRAM configuration
INFINEON TECHNOLOGIES AG26 citations92
US6744662B2Jun 1, 2004
Magnetoresistive memory (MRAM)
INFINEON TECHNOLOGIES AG13 citations84
US6545900B2Apr 8, 2003
MRAM module configuration
INFINEON TECHNOLOGIES AG18 citations84
US6473335B2Oct 29, 2002
MRAM configuration
INFINEON TECHNOLOGIES AG14 citations83
US6781896B2Aug 24, 2004
MRAM semiconductor memory configuration with redundant cell arrays
INFINEON TECHNOLOGIES AG10 citations74
US7158405B2Jan 2, 2007
Semiconductor memory device having a plurality of memory areas with memory elements
INFINEON TECHNOLOGIES AG2 citations63
US6816406B2Nov 9, 2004
Magnetic memory configuration
INFINEON TECHNOLOGIES AG2 citations62
US6657916B2Dec 2, 2003
Integrated memory with memory cell array
INFINEON TECHNOLOGIES AG2 citations62
US6639829B2Oct 28, 2003
Configuration and method for the low-loss writing of an MRAM
INFINEON TECHNOLOGIES AG6 citations62
US6618306B2Sep 9, 2003
Semiconductor memory device having row and column redundancy circuit and method of manufacturing the circuit
INFINEON TECHNOLOGIES AG4 citations62
US6538950B2Mar 25, 2003
Integrated memory and corresponding operating method
INFINEON TECHNOLOGIES AG2 citations62
US6496423B2Dec 17, 2002
Chip ID register configuration
INFINEON TECHNOLOGIES AG4 citations62
US6459631B2Oct 1, 2002
Configuration for implementing redundancy for a memory chip
INFINEON TECHNOLOGIES AG2 citations62
US6853229B2Feb 8, 2005
Circuit for transforming a single ended signal into a differential mode signal
INFINEON TECHNOLOGIES AG1 citations52
US6429731B2Aug 6, 2002
CMOS voltage divider
INFINEON TECHNOLOGIES AG0 citations41
IBM
3 patentsUS7239537B2Jul 3, 2007
Method and apparatus for current sense amplifier calibration in MRAM devices
IBM29 citations92
US7057924B2Jun 6, 2006
Precharging the write path of an MRAM device for fast write operation
IBM4 citations62
US6930915B2Aug 16, 2005
Cross-point MRAM array with reduced voltage drop across MTJ's
IBM5 citations62