Inventor
SHIM SE-JIN
KR9 patents
Patents
9 patentsUS6218260B1Apr 17, 2001
Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD76 citations95
US5622889AApr 22, 1997
High capacitance capacitor manufacturing method
SAMSUNG ELECTRONICS CO LTD27 citations92
US5943584AAug 24, 1999
Annealing methods of doping electrode surfaces using dopant gases
SAMSUNG ELECTRONICS CO LTD35 citations91
US6087226AJul 11, 2000
Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structures
SAMSUNG ELECTRONICS CO LTD13 citations74
US6004858ADec 21, 1999
Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers
SAMSUNG ELECTRONICS CO LTD10 citations74
US5943570AAug 24, 1999
Methods of forming capacitor electrodes containing HSG semiconductor layers therein
SAMSUNG ELECTRONICS CO LTD12 citations74
US6624069B2Sep 23, 2003
Methods of forming integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD12 citations73
US6876029B2Apr 5, 2005
Integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD4 citations62
US6245632B1Jun 12, 2001
Variable temperature methods of forming hemispherical grained silicon (HSG-Si) layers
SAMSUNG ELECTRONICS CO LTD4 citations62