Inventor
JIN YOU-CHAN
KR4 patents
Patents
4 patentsUS6218260B1Apr 17, 2001
Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD76 citations95
US5943584AAug 24, 1999
Annealing methods of doping electrode surfaces using dopant gases
SAMSUNG ELECTRONICS CO LTD35 citations91
US6624069B2Sep 23, 2003
Methods of forming integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD12 citations73
US6876029B2Apr 5, 2005
Integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD4 citations62