Inventor
WON SEOK-JUN
KR86 patents
⚠️ This page may combine multiple inventors who share the name “WON SEOK-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS9029244B2May 12, 2015
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD417 citations99
US6580111B2Jun 17, 2003
Metal-insulator-metal capacitor
SAMSUNG ELECTRONICS CO LTD77 citations98
US6218260B1Apr 17, 2001
Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD76 citations95
US7084056B2Aug 1, 2006
Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensor
SAMSUNG ELECTRONICS CO LTD28 citations93
US7018933B2Mar 28, 2006
Method of forming a metal-insulator-metal capacitor
SAMSUNG ELECTRONICS CO LTD30 citations93
US6750092B2Jun 15, 2004
Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
SAMSUNG ELECTRONICS CO LTD21 citations93
US7481882B2Jan 27, 2009
Method for forming a thin film
SAMSUNG ELECTRONICS CO LTD34 citations92
US7394641B2Jul 1, 2008
MEMS tunable capacitor with a wide tuning range
SAMSUNG ELECTRONICS CO LTD15 citations92
US7232492B2Jun 19, 2007
Method of forming thin film for improved productivity
SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006
Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US6946342B2Sep 20, 2005
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6677217B2Jan 13, 2004
Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps
SAMSUNG ELECTRONICS CO LTD24 citations92
US6667209B2Dec 23, 2003
Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation
SAMSUNG ELECTRONICS CO LTD46 citations92
US6207489B1Mar 27, 2001
Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
SAMSUNG ELECTRONICS CO LTD35 citations92
US6136641AOct 24, 2000
Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
SAMSUNG ELECTRONICS CO LTD39 citations92
US6133148AOct 17, 2000
Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method
SAMSUNG ELECTRONICS CO LTD36 citations89
US7872299B2Jan 18, 2011
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7633112B2Dec 15, 2009
Metal-insulator-metal capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7623338B2Nov 24, 2009
Multiple metal-insulator-metal capacitors and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US7491654B2Feb 17, 2009
Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film
SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009
Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US7288453B2Oct 30, 2007
Method of fabricating analog capacitor using post-treatment technique
SAMSUNG ELECTRONICS CO LTD17 citations84
US7180117B2Feb 20, 2007
Flat-type capacitor for integrated circuit and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7180120B2Feb 20, 2007
Semiconductor device having dual stacked MIM capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7125767B2Oct 24, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US6680251B2Jan 20, 2004
Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
SAMSUNG ELECTRONICS CO LTD16 citations84
US6653186B2Nov 25, 2003
Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer
SAMSUNG ELECTRONICS CO LTD15 citations84
US6613629B2Sep 2, 2003
Methods for manufacturing storage nodes of stacked capacitors
SAMSUNG ELECTRONICS CO LTD16 citations84
US6537875B2Mar 25, 2003
Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD15 citations84
US9312376B2Apr 12, 2016
Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations83
US7297591B2Nov 20, 2007
Method for manufacturing capacitor of semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations83
US9035398B2May 19, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US7888773B2Feb 15, 2011
Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US7508649B2Mar 24, 2009
Multi-layered dielectric film of microelectronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7371651B2May 13, 2008
Flat-type capacitor for integrated circuit and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7008837B2Mar 7, 2006
Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode
SAMSUNG ELECTRONICS CO LTD7 citations74
US6653155B2Nov 25, 2003
Integrated circuit devices including a resistor pattern and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US6416584B1Jul 9, 2002
Apparatus for forming a film on a substrate
SAMSUNG ELECTRONICS CO LTD11 citations74
US9218977B2Dec 22, 2015
Fabricating method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US7203052B2Apr 10, 2007
Method of fabricating MEMS tunable capacitor with wide tuning range
SAMSUNG ELECTRONICS CO LTD5 citations73
US7042698B2May 9, 2006
MEMS tunable capacitor with a wide tuning range and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations73
US6624069B2Sep 23, 2003
Methods of forming integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD12 citations73
US9786785B2Oct 10, 2017
Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations72
US9702041B2Jul 11, 2017
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD1 citations63
US9034714B2May 19, 2015
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7892966B2Feb 22, 2011
Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD3 citations63
TSENG WEI-HSIUNG
2 patentsWON SEOK-JUN
1 patentShowing the top 50 of 86 patents by PatentIndex Score.