P

Inventor

WON SEOK-JUN

KR86 patents
⚠️ This page may combine multiple inventors who share the name “WON SEOK-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

47 patents
US9029244B2May 12, 2015

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD417 citations99
US6580111B2Jun 17, 2003

Metal-insulator-metal capacitor

SAMSUNG ELECTRONICS CO LTD77 citations98
US6218260B1Apr 17, 2001

Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby

SAMSUNG ELECTRONICS CO LTD76 citations95
US7084056B2Aug 1, 2006

Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensor

SAMSUNG ELECTRONICS CO LTD28 citations93
US7018933B2Mar 28, 2006

Method of forming a metal-insulator-metal capacitor

SAMSUNG ELECTRONICS CO LTD30 citations93
US6750092B2Jun 15, 2004

Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby

SAMSUNG ELECTRONICS CO LTD21 citations93
US7481882B2Jan 27, 2009

Method for forming a thin film

SAMSUNG ELECTRONICS CO LTD34 citations92
US7394641B2Jul 1, 2008

MEMS tunable capacitor with a wide tuning range

SAMSUNG ELECTRONICS CO LTD15 citations92
US7232492B2Jun 19, 2007

Method of forming thin film for improved productivity

SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006

Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD27 citations92
US6946342B2Sep 20, 2005

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD22 citations92
US6677217B2Jan 13, 2004

Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps

SAMSUNG ELECTRONICS CO LTD24 citations92
US6667209B2Dec 23, 2003

Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation

SAMSUNG ELECTRONICS CO LTD46 citations92
US6207489B1Mar 27, 2001

Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film

SAMSUNG ELECTRONICS CO LTD35 citations92
US6136641AOct 24, 2000

Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere

SAMSUNG ELECTRONICS CO LTD39 citations92
US6133148AOct 17, 2000

Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method

SAMSUNG ELECTRONICS CO LTD36 citations89
US7872299B2Jan 18, 2011

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7633112B2Dec 15, 2009

Metal-insulator-metal capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7623338B2Nov 24, 2009

Multiple metal-insulator-metal capacitors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US7491654B2Feb 17, 2009

Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film

SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009

Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7288453B2Oct 30, 2007

Method of fabricating analog capacitor using post-treatment technique

SAMSUNG ELECTRONICS CO LTD17 citations84
US7180117B2Feb 20, 2007

Flat-type capacitor for integrated circuit and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7180120B2Feb 20, 2007

Semiconductor device having dual stacked MIM capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7125767B2Oct 24, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US6680251B2Jan 20, 2004

Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters

SAMSUNG ELECTRONICS CO LTD16 citations84
US6653186B2Nov 25, 2003

Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer

SAMSUNG ELECTRONICS CO LTD15 citations84
US6613629B2Sep 2, 2003

Methods for manufacturing storage nodes of stacked capacitors

SAMSUNG ELECTRONICS CO LTD16 citations84
US6537875B2Mar 25, 2003

Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD15 citations84
US9312376B2Apr 12, 2016

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations83
US7297591B2Nov 20, 2007

Method for manufacturing capacitor of semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations83
US9035398B2May 19, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations81
US7888773B2Feb 15, 2011

Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US7508649B2Mar 24, 2009

Multi-layered dielectric film of microelectronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7371651B2May 13, 2008

Flat-type capacitor for integrated circuit and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7008837B2Mar 7, 2006

Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

SAMSUNG ELECTRONICS CO LTD7 citations74
US6653155B2Nov 25, 2003

Integrated circuit devices including a resistor pattern and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US6416584B1Jul 9, 2002

Apparatus for forming a film on a substrate

SAMSUNG ELECTRONICS CO LTD11 citations74
US9218977B2Dec 22, 2015

Fabricating method of a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US7203052B2Apr 10, 2007

Method of fabricating MEMS tunable capacitor with wide tuning range

SAMSUNG ELECTRONICS CO LTD5 citations73
US7042698B2May 9, 2006

MEMS tunable capacitor with a wide tuning range and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations73
US6624069B2Sep 23, 2003

Methods of forming integrated circuit capacitors having doped HSG electrodes

SAMSUNG ELECTRONICS CO LTD12 citations73
US9786785B2Oct 10, 2017

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations72
US9702041B2Jul 11, 2017

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD1 citations63
US9034714B2May 19, 2015

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7892966B2Feb 22, 2011

Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same

SAMSUNG ELECTRONICS CO LTD3 citations63

TSENG WEI-HSIUNG

2 patents

WON SEOK-JUN

1 patent

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