Inventor
CHAN BOR-WEN
TW32 patents
⚠️ This page may combine multiple inventors who share the name “CHAN BOR-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
22 patentsUS7354847B2Apr 8, 2008
Method of trimming technology
TAIWAN SEMICONDUCTOR MFG528 citations99
US6764903B1Jul 20, 2004
Dual hard mask layer patterning method
TAIWAN SEMICONDUCTOR MFG32 citations92
US6291312B1Sep 18, 2001
Method for forming pullback opening above shallow trenc isolation structure
TAIWAN SEMICONDUCTOR MFG20 citations92
US6232175B1May 15, 2001
Method of manufacturing double-recess crown-shaped DRAM capacitor
TAIWAN SEMICONDUCTOR MFG32 citations92
US7195969B2Mar 27, 2007
Strained channel CMOS device with fully silicided gate electrode
TAIWAN SEMICONDUCTOR MFG23 citations90
US7122484B2Oct 17, 2006
Process for removing organic materials during formation of a metal interconnect
TAIWAN SEMICONDUCTOR MFG19 citations90
US6440875B1Aug 27, 2002
Masking layer method for forming a spacer layer with enhanced linewidth control
TAIWAN SEMICONDUCTOR MFG33 citations90
US6656796B2Dec 2, 2003
Multiple etch method for fabricating split gate field effect transistor (FET) device
TAIWAN SEMICONDUCTOR MFG30 citations89
US7081413B2Jul 25, 2006
Method and structure for ultra narrow gate
TAIWAN SEMICONDUCTOR MFG16 citations84
US6706591B1Mar 16, 2004
Method of forming a stacked capacitor structure with increased surface area for a DRAM device
TAIWAN SEMICONDUCTOR MFG15 citations84
US6503848B1Jan 7, 2003
Method of forming a smooth polysilicon surface using a soft etch to enlarge the photo lithography window
TAIWAN SEMICONDUCTOR MFG15 citations84
US7241674B2Jul 10, 2007
Method of forming silicided gate structure
TAIWAN SEMICONDUCTOR MFG7 citations74
US6812044B2Nov 2, 2004
Advanced control for plasma process
TAIWAN SEMICONDUCTOR MFG7 citations74
US6352919B1Mar 5, 2002
Method of fabricating a borderless via
TAIWAN SEMICONDUCTOR MFG12 citations74
US6218244B1Apr 17, 2001
Method of fabricating transistor
TAIWAN SEMICONDUCTOR MFG7 citations74
US8357603B2Jan 22, 2013
Metal gate fill and method of making
TAIWAN SEMICONDUCTOR MFG6 citations73
US6828237B1Dec 7, 2004
Sidewall polymer deposition method for forming a patterned microelectronic layer
TAIWAN SEMICONDUCTOR MFG8 citations72
US7023042B2Apr 4, 2006
Method of forming a stacked capacitor structure with increased surface area for a DRAM device
TAIWAN SEMICONDUCTOR MFG2 citations63
US6713398B2Mar 30, 2004
Method of planarizing polysillicon plug
TAIWAN SEMICONDUCTOR MFG2 citations63
US7067391B2Jun 27, 2006
Method to form a metal silicide gate device
TAIWAN SEMICONDUCTOR MFG6 citations61
US7202172B2Apr 10, 2007
Microelectronic device having disposable spacer
TAIWAN SEMICONDUCTOR MFG2 citations59
US8785313B2Jul 22, 2014
Method of manufacturing device having a blocking structure
TAIWAN SEMICONDUCTOR MFG0 citations52