Inventor

SAKAKIMA HIROSHI

JP79 patents

⚠️ This page may combine multiple inventors who share the name “SAKAKIMA HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAKAKIMA HIROSHI

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell

Magnetoresistance element, magnetoresistive head and magnetoresistive memory

Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element

Magnetoresistive element and memory element

Magneto-resistive element

Thin film magnetic head

Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film

Magnetoresistive device and magnetoresistive head

Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same

Magnetoresistive device and magnetoresistive head

Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same

Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same

Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell

Recording/reproducing head and recording/reproducing apparatus incorporating the same

Magnetoresistive device and/or multi-magnetoresistive device

Magneto-resistive device and magneto-resistive effect type storage device

Magnetoresistive device and method for producing the same, and magnetic component

Compositionally modulated, nitrided alloy films and method for making the same

Magnetic nitride film

Method for making magnetic heads

Magneto-resistive element

Magnetoresistive element and method for producing the same

Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film

Magnetoresistance effect device utilizing an oxide film to produce antiferromagnetic exchange-coupling between first and second magnetic films in either the pinned layer or the free layer of the device

Magnetoresistive device with an α-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness

Magnetoresistive element and magnetic memory element and magnetic head using the same

Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film

Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same

Thin film magnetic head

Magnetoresistive device and magnetoresistive head

Memory element

Method for making soft magnetic film

Soft magnetic alloy films

Magnetoresistance effect element

Magnetic head and method of manufacturing the same

Soft magnetic alloy films having a modulated nitrogen content

Magnetic head and method of producing same

Method of heat treatments of amorphous alloy ribbons

Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device

Magnetoresistance effect memory device and method for producing the same

Magnetic film

Magnetoresistive device having a highly smooth metal reflective layer

Magnetic thin film and magnetic head using the same

Amorphous magnetic alloys

Magnetic head

Magnetoresistive device and method for producing the same, and magnetic component

Magneto-resistive element, magnetic head, and magnetic recording and reproduction apparatus

Magnetoresistive element and magnetoresistive device using the same

Magnetoresistive device and magnetic component

SHIMADZU CORP

Magneto-resistance effect element, magneto-resistance effect type head, memory element, and method for manufacturing them