Inventor
HWANG SANG-JOON
KR24 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SANG-JOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7020031B2Mar 28, 2006
Synchronous semiconductor memory devices and data strobe input buffers with an input buffer circuit and a detection circuit for buffering data thereto
SAMSUNG ELECTRONICS CO LTD54 citations95
US9831003B2Nov 28, 2017
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD30 citations94
US6020761AFeb 1, 2000
Input buffers and controlling methods for integrated circuit memory devices that operate with low voltage transistor-transistor logic (LVTTL) and with stub series terminated transceiver logic (SSTL)
SAMSUNG ELECTRONICS CO LTD26 citations92
US10347355B2Jul 9, 2019
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD4 citations84
US9659669B2May 23, 2017
Device and method for repairing memory cell and memory system including the device
SAMSUNG ELECTRONICS CO LTD6 citations84
US10416896B2Sep 17, 2019
Memory module, memory device, and processing device having a processor mode, and memory system
SAMSUNG ELECTRONICS CO LTD11 citations83
US7133324B2Nov 7, 2006
Synchronous dynamic random access memory devices having dual data rate 1 (DDR1) and DDR2 modes of operation and methods of operating same
SAMSUNG ELECTRONICS CO LTD14 citations83
US7440340B2Oct 21, 2008
Output buffer of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US6259642B1Jul 10, 2001
Semiconductor memory device with reduced sensing noise and sensing current
SAMSUNG ELECTRONICS CO LTD9 citations74
US6859409B2Feb 22, 2005
Semiconductor memory having sense amplifier architecture
SAMSUNG ELECTRONICS CO LTD9 citations73
US11169711B2Nov 9, 2021
Memory module, memory device, and processing device having a processor mode, and memory system
SAMSUNG ELECTRONICS CO LTD1 citations62
US9171605B1Oct 27, 2015
Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7205799B2Apr 17, 2007
Input buffer having a stabilized operating point and an associated method
SAMSUNG ELECTRONICS CO LTD4 citations60
US8379476B2Feb 19, 2013
Semiconductor memory device for reducing ripple noise of back-bias voltage and method of driving semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations58
US9858981B2Jan 2, 2018
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9524770B2Dec 20, 2016
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9460766B2Oct 4, 2016
Memory device, and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9165673B2Oct 20, 2015
Semiconductor memory device including sensing verification unit
SAMSUNG ELECTRONICS CO LTD0 citations51
US9298612B2Mar 29, 2016
Semiconductor memory device and computer system including the same
SAMSUNG ELECTRONICS CO LTD0 citations49