Inventor · disambiguated record
Mayumi Morizuka
Also filed as: MORIZUKA MAYUMI
16 granted patents·236 citations·filing 1997–2017
93Inventor score
Top patents by PatentIndex Score
16 records- 0193US7490390B2Method of manufacturing a voltage controlled oscillatorTOSHIBA KK·Filed 2007·Granted Feb 17, 2009·26 cites·6 claims
- 0288US9865724B1Nitride semiconductor deviceTOSHIBA KK·Filed 2017·Granted Jan 9, 2018·6 cites·18 claims
- 0388US6555851B2High electron mobility transistorTOSHIBA KK·Filed 2001·Granted Apr 29, 2003·35 cites·17 claims
- 0485US6489628B1High electron mobility transistor and power amplifierTOSHIBA KK·Filed 2000·Granted Dec 3, 2002·40 cites·6 claims
- 0582US7211933B2Voltage controlled oscillatorTOSHIBA KK·Filed 2004·Granted May 1, 2007·19 cites·14 claims
- 0681US9059327B2Nitride semiconductor Schottky diode and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Jun 16, 2015·4 cites·7 claims
- 0778US6134424AHigh-frequency power amplifier and mobile communication device using sameTOSHIBA KK·Filed 1997·Granted Oct 17, 2000·50 cites·14 claims
- 0875US6908799B2High electron mobility transistor and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jun 21, 2005·13 cites·7 claims
- 0975US6689652B2Method of manufacturing a high electron mobility transistorTOSHIBA KK·Filed 2003·Granted Feb 10, 2004·14 cites·5 claims
- 1073US7221920B2Voltage controlled oscillator, frequency synthesizer and communication apparatusTOSHIBA KK·Filed 2004·Granted May 22, 2007·19 cites·17 claims
- 1166US8969917B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Mar 3, 2015·2 cites·5 claims
- 1265US9136346B2High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficientlyTOSHIBA KK·Filed 2013·Granted Sep 15, 2015·1 cites·11 claims
- 1349US9484429B2High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Nov 1, 2016·0 cites·4 claims
- 1448US9331169B2Nitride semiconductor Schottky diode and method for manufacturing sameTOSHIBA KK·Filed 2015·Granted May 3, 2016·0 cites·11 claims
- 1541US8754420B2Semiconductor deviceIKEDA KENTARO·Filed 2012·Granted Jun 17, 2014·0 cites·10 claims
- 1640US6037619AField effect transistor and high-frequency power amplifier having sameTOSHIBA KK·Filed 1998·Granted Mar 14, 2000·7 cites·15 claims
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