Inventor

RIZZO NICHOLAS D

US53 patents

⚠️ This page may combine multiple inventors who share the name “RIZZO NICHOLAS D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RIZZO NICHOLAS D

FREESCALE SEMICONDUCTOR INC

Oblique deposition to induce magnetic anisotropy for MRAM cells

Spin-transfer based MRAM using angular-dependent selectivity

Reduced power magnetoresistive random access memory elements

MRAM element and methods for writing the MRAM element

Magnetic shielding for electronic circuits which include magnetic materials

MRAM and methods for reading the MRAM

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

Low power magnetoelectronic device structures utilizing enhanced permeability materials

Triple pulse method for MRAM toggle bit characterization

MRAM architecture

Method of applying cladding material on conductive lines of MRAM devices

Synthetic antiferromagnetic structure for magnetoelectronic devices

Synthetic antiferromagnetic structure for magnetoelectronic devices

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

Method of fabricating a self-aligned magnetic tunneling junction and via contact

Magneto resistance random access memory element

Low power magnetoresistive random access memory elements

EVERSPIN TECHNOLOGIES INC

Magnetic element having reduced current density

Spin-transfer based MRAM with reduced critical current density

MRAM synthetic anitferomagnet structure

Spin-transfer MRAM structure and methods

Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structure

Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structure

MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure

MRAM synthetic anitferomagnet structure

Method for reducing current density in a magnetoelectronic device

Structure and method for fabricating cladded conductive lines in magnetic memories

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Low power magnetoelectronic device structures utilizing enhanced permeability materials

Enhanced permeability device structures and method

Magnetic tunnel junction memory and method with etch-stop layer

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Oscillator and method of manufacture

MOTOROLA INC

Magnetoresistive random access memory with reduced switching field

Method of writing to scalable magnetoresistance random access memory element

Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer

Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture

MRAM write apparatus and method

Magnetoresistance random access memory for improved scalability

Narrow gap cladding field enhancement for low power programming of a MRAM device

Conductive line with multiple turns for programming a MRAM device

Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers

Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof

Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers

MATHER PHILLIP G

Electronic device including a magneto-resistive memory device and a process for forming the electronic device

Electronic device including a magneto-resistive memory device and a process for forming the electronic device

PIETAMBARAM SRINIVAS V

MRAM synthetic antiferromagnet structure

FITELSON MICHAEL M

Skyrmion stack memory device

NORTHROP GRUMMAN SYSTEMS CORP

Skyrmion stack memory device