Inventor
ENGEL BRADLEY N
US38 patents
⚠️ This page may combine multiple inventors who share the name “ENGEL BRADLEY N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
17 patentsUS6818961B1Nov 16, 2004
Oblique deposition to induce magnetic anisotropy for MRAM cells
FREESCALE SEMICONDUCTOR INC78 citations98
US7149106B2Dec 12, 2006
Spin-transfer based MRAM using angular-dependent selectivity
FREESCALE SEMICONDUCTOR INC86 citations97
US7262069B2Aug 28, 2007
3-D inductor and transformer devices in MRAM embedded integrated circuits
FREESCALE SEMICONDUCTOR INC38 citations92
US7129098B2Oct 31, 2006
Reduced power magnetoresistive random access memory elements
FREESCALE SEMICONDUCTOR INC25 citations92
US6956763B2Oct 18, 2005
MRAM element and methods for writing the MRAM element
FREESCALE SEMICONDUCTOR INC20 citations92
US6956764B2Oct 18, 2005
Method of writing to a multi-state magnetic random access memory cell
FREESCALE SEMICONDUCTOR INC37 citations92
US6909631B2Jun 21, 2005
MRAM and methods for reading the MRAM
FREESCALE SEMICONDUCTOR INC47 citations92
US6760266B2Jul 6, 2004
Sense amplifier and method for performing a read operation in a MRAM
FREESCALE SEMICONDUCTOR INC28 citations92
US6967366B2Nov 22, 2005
Magnetoresistive random access memory with reduced switching field variation
FREESCALE SEMICONDUCTOR INC15 citations84
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US6927072B2Aug 9, 2005
Method of applying cladding material on conductive lines of MRAM devices
FREESCALE SEMICONDUCTOR INC13 citations82
US7235408B2Jun 26, 2007
Synthetic antiferromagnetic structure for magnetoelectronic devices
FREESCALE SEMICONDUCTOR INC5 citations74
US7172904B2Feb 6, 2007
High sensitivity sensor for tagged magnetic bead bioassays
FREESCALE SEMICONDUCTOR INC9 citations74
US6898112B2May 24, 2005
Synthetic antiferromagnetic structure for magnetoelectronic devices
FREESCALE SEMICONDUCTOR INC9 citations74
US7184300B2Feb 27, 2007
Magneto resistance random access memory element
FREESCALE SEMICONDUCTOR INC8 citations72
US7329935B2Feb 12, 2008
Low power magnetoresistive random access memory elements
FREESCALE SEMICONDUCTOR INC4 citations63
US7402529B2Jul 22, 2008
Method of applying cladding material on conductive lines of MRAM devices
FREESCALE SEMICONDUCTOR INC0 citations51
MOTOROLA INC
10 patentsUS6633498B1Oct 14, 2003
Magnetoresistive random access memory with reduced switching field
MOTOROLA INC153 citations99
US6654278B1Nov 25, 2003
Magnetoresistance random access memory
MOTOROLA INC164 citations98
US6545906B1Apr 8, 2003
Method of writing to scalable magnetoresistance random access memory element
MOTOROLA INC522 citations98
US6430084B1Aug 6, 2002
Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
MOTOROLA INC101 citations98
US6351409B1Feb 26, 2002
MRAM write apparatus and method
MOTOROLA INC100 citations98
US6531723B1Mar 11, 2003
Magnetoresistance random access memory for improved scalability
MOTOROLA INC80 citations96
US6720597B2Apr 13, 2004
Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
MOTOROLA INC42 citations92
US6714446B1Mar 30, 2004
Magnetoelectronics information device having a compound magnetic free layer
MOTOROLA INC53 citations92
US6515341B2Feb 4, 2003
Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
MOTOROLA INC22 citations92
US6579625B1Jun 17, 2003
Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
MOTOROLA INC12 citations73
EVERSPIN TECHNOLOGIES INC
5 patentsUS7965077B2Jun 21, 2011
Two-axis magnetic field sensor with multiple pinning directions
EVERSPIN TECHNOLOGIES INC22 citations92
US7547480B2Jun 16, 2009
Magnetic tunnel junction pressure sensors and methods
EVERSPIN TECHNOLOGIES INC12 citations84
US7541804B2Jun 2, 2009
Magnetic tunnel junction sensor
EVERSPIN TECHNOLOGIES INC11 citations84
US7602177B2Oct 13, 2009
Sensor having moveable cladding suspended near a magnetic field source
EVERSPIN TECHNOLOGIES INC5 citations73
US7635903B2Dec 22, 2009
Oscillator and method of manufacture
EVERSPIN TECHNOLOGIES INC2 citations62
STORAGE TECHNOLOGY CORP
4 patentsUS6674618B2Jan 6, 2004
Dual element magnetoresistive read head with integral element stabilization
STORAGE TECHNOLOGY CORP20 citations92
US6331773B1Dec 18, 2001
Pinned synthetic anti-ferromagnet with oxidation protection layer
STORAGE TECHNOLOGY CORP47 citations92
US6278594B1Aug 21, 2001
Dual element magnetoresistive read head with integral element stabilization
STORAGE TECHNOLOGY CORP22 citations92
US6191917B1Feb 20, 2001
Thin film tape write head for dual frequency operation
STORAGE TECHNOLOGY CORP7 citations74