Inventor

SUVOROV ALEXANDER

US29 patents

⚠️ This page may combine multiple inventors who share the name “SUVOROV ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUVOROV ALEXANDER

CREE INC

High temperature ion implantation of nitride based HEMTs

Low temperature formation of backside ohmic contacts for vertical devices

LED fabrication via ion implant isolation

High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation

Low temperature formation of backside ohmic contacts for vertical devices

Methods of fabricating silicon carbide power devices by controlled annealing

LED fabrication via ion implant isolation

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Methods and apparatuses related to shaping wafers fabricated by ion implantation

Power schottky diodes having local current spreading layers and methods of forming such devices

LED fabrication via ion implant isolation

Low temperature formation of backside ohmic contacts for vertical devices

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

LED fabrication via ion implant isolation

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Transistors having implanted channel layers and methods of fabricating the same

High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

Transistors having implanted channels and implanted P-type regions beneath the source region

SUVOROV ALEXANDER

Growing polygonal carbon from photoresist

Methods for fabricating semiconductor devices having reduced implant contamination

CREE RESEARCH INC

Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion

WOLFSPEED INC

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

MCCLURE DAVIS ANDREW

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

OLOUGHLIN MICHAEL JOHN

Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device