P

Inventor

JANESKY JASON A

US16 patents
⚠️ This page may combine multiple inventors who share the name “JANESKY JASON A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EVERSPIN TECHNOLOGIES INC

9 patents
US8754460B2Jun 17, 2014

MRAM synthetic anitferomagnet structure

EVERSPIN TECHNOLOGIES INC9 citations92
US7572645B2Aug 11, 2009

Magnetic tunnel junction structure and method

EVERSPIN TECHNOLOGIES INC47 citations92
US10199571B2Feb 5, 2019

Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structure

EVERSPIN TECHNOLOGIES INC4 citations84
US9793468B2Oct 17, 2017

Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structure

EVERSPIN TECHNOLOGIES INC4 citations84
US9391264B2Jul 12, 2016

MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure

EVERSPIN TECHNOLOGIES INC7 citations84
US9093637B2Jul 28, 2015

MRAM synthetic anitferomagnet structure

EVERSPIN TECHNOLOGIES INC6 citations84
US10897008B2Jan 19, 2021

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

EVERSPIN TECHNOLOGIES INC1 citations73
US10707410B2Jul 7, 2020

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

EVERSPIN TECHNOLOGIES INC2 citations73
US11744161B2Aug 29, 2023

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

EVERSPIN TECHNOLOGIES INC0 citations62

FREESCALE SEMICONDUCTOR INC

5 patents
US6818961B1Nov 16, 2004

Oblique deposition to induce magnetic anisotropy for MRAM cells

FREESCALE SEMICONDUCTOR INC78 citations98
US7129098B2Oct 31, 2006

Reduced power magnetoresistive random access memory elements

FREESCALE SEMICONDUCTOR INC25 citations92
US7158407B2Jan 2, 2007

Triple pulse method for MRAM toggle bit characterization

FREESCALE SEMICONDUCTOR INC10 citations84
US6967366B2Nov 22, 2005

Magnetoresistive random access memory with reduced switching field variation

FREESCALE SEMICONDUCTOR INC15 citations84
US7329935B2Feb 12, 2008

Low power magnetoresistive random access memory elements

FREESCALE SEMICONDUCTOR INC4 citations63

PIETAMBARAM SRINIVAS V

1 patent
US8497538B2Jul 30, 2013

MRAM synthetic antiferromagnet structure

PIETAMBARAM SRINIVAS V11 citations90

MOTOROLA INC

1 patent
US6579625B1Jun 17, 2003

Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers

MOTOROLA INC12 citations73