Inventor

SLAUGHTER JON M

US45 patents

⚠️ This page may combine multiple inventors who share the name “SLAUGHTER JON M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SLAUGHTER JON M

EVERSPIN TECHNOLOGIES INC

MRAM synthetic anitferomagnet structure

Two-axis magnetic field sensor with multiple pinning directions

Magnetic tunnel junction structure and method

Magnetoresistive stack with seed region and method of manufacturing the same

Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structure

Magnetoresistive stack, seed region thereof and method of manufacturing same

Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structure

MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure

MRAM synthetic anitferomagnet structure

Magnetic field sensing device

Method for reducing current density in a magnetoelectronic device

Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence

Magnetic tunnel junction device with improved barrier layer

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Magnetoresistive stack with seed region and method of manufacturing the same

Low power magnetoelectronic device structures utilizing enhanced permeability materials

Multi-state magnetoresistance random access cell with improved memory storage density

Magnetoresistive stack with seed region and method of manufacturing the same

Magnetoresistive stack with seed region and method of manufacturing the same

Magnetoresistive stack with seed region and method of manufacturing the same

Enhanced permeability device structures and method

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

FREESCALE SEMICONDUCTOR INC

Amorphous alloys for magnetic devices

Oblique deposition to induce magnetic anisotropy for MRAM cells

Method of making amorphous alloys for semiconductor device

Synthetic antiferromagnet structures for use in MTJs in MRAM technology

Nanocrystalline layers for improved MRAM tunnel junctions

Multi-state magnetoresistance random access cell with improved memory storage density

Method of writing to a multi-state magnetic random access memory cell

Low power magnetoelectronic device structures utilizing enhanced permeability materials

Synthetic antiferromagnet structures for use in MTJs in MRAM technology

Magnetoresistive random access memory with reduced switching field variation

High throughput dual ion beam deposition apparatus

Synthetic antiferromagnetic structure for magnetoelectronic devices

Synthetic antiferromagnetic structure for magnetoelectronic devices

MOTOROLA INC

Magnetic random access memory and fabricating method thereof

Method of fabricating a magnetic random access memory

Magnetoresistive random access memory device and method of fabrication thereof

TMR material having a substantially smooth and continuous ultra-thin magnetic layer

FREESCALE SEMICONDUCOR INC

Magnetic tunnel junction element structures and methods for fabricating the same

PIETAMBARAM SRINIVAS V

MRAM synthetic antiferromagnet structure

MATHER PHILLIP G

Two-axis magnetic field sensor with substantially orthogonal pinning directions

SUN JIJUN

Magnetic tunnel junction device

ENGEL BRADLEY N

Two-axis magnetic field sensor with multiple pinning directions