Inventor

JACOB AJEY P

US45 patents

⚠️ This page may combine multiple inventors who share the name “JACOB AJEY P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JACOB AJEY P

GLOBALFOUNDRIES INC

Vertical field effect transistor formation with critical dimension control

Method for forming nanowires including multiple integrated devices with alternate channel materials

Method to form defect free replacement fins by H2 anneal

Method for forming nanowires including multiple integrated devices with alternate channel materials

Non-planar monolithic hybrid optoelectronic structures and methods

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

Fin device with blocking layer in channel region

Process for faciltiating fin isolation schemes

Integrated display system with multi-color light emitting diodes (LEDs)

Light emitting diodes (LEDs) with integrated CMOS circuits

Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide

Device isolation in finFET CMOS

Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process

Silicon nitride grating couplers

Magneto-resistive memory structures with improved sensing, and associated sensing methods

Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes

Methods of forming semiconductor devices including an electrically-decoupled fin

Light emitting diodes (LEDs) with stacked multi-color pixels for displays

Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide

Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

FinFETs for light emitting diode displays

Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process

Light emitting diode structures

Heterogeneous integration of 3D SI and III-V vertical nanowire structures for mixed signal circuits fabrication

Integrated graphene detectors with waveguides

Integrated graphene detectors with waveguides

Programmable via devices with metal/semiconductor via links and fabrication methods thereof

Programmable via devices with metal/semiconductor via links and fabrication methods thereof

Programmable devices with current-facilitated migration and fabrication methods

Methods for fabricating programmable devices and related structures

Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device

Integrated vertical transistors and light emitting diodes

Light emitting diodes (LEDs) with integrated CMOS circuits

Light emitting diodes

LEDs with three color RGB pixels for displays

LEDs with three color RGB pixels for displays

Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices

NIKONOV DMITRI E

Methods of forming spin torque devices and structures formed thereby

Methods of forming spin torque devices and structures formed thereby

MASZARA WITOLD P

Methods of forming FinFET devices with alternative channel materials

Methods of forming FinFET devices with alternative channel materials

JACOB AJEY P

Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices

GLOBALFOUNDRIES US INC

Integrated circuits with embedded memory structures and methods for fabricating the same

UNIV SOUTHERN CALIFORNIA

Electro-optic frequency transducer using coupled microdisk resonators